| 10128261 |
Cobalt-containing conductive layers for control gate electrodes in a memory structure |
Raghuveer S. Makala, Rahul Sharangpani, Genta Mizuno, Naoki Takeguchi, Senaka Kanakamedala +3 more |
2018-11-13 |
| 9847340 |
Methods of tunnel oxide layer formation in 3D NAND memory structures and associated devices |
Darwin Franseda Fan, Gordon A. Haller, John D. Hopkins, Shyam Surthi, Anish A. Khandekar |
2017-12-19 |
| 9842907 |
Memory device containing cobalt silicide control gate electrodes and method of making thereof |
Raghuveer S. Makala, Zhenyu Lu, Somesh Peri, Rahul Sharangpani |
2017-12-12 |
| 9842857 |
Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices |
Rahul Sharangpani, Raghuveer S. Makala, Srikanth Ranganathan, Mark Juanitas, Johann Alsmeier |
2017-12-12 |
| 9780182 |
Molybdenum-containing conductive layers for control gate electrodes in a memory structure |
Somesh Peri, Raghuveer S. Makala, Yao-Sheng Lee, Johann Alsmeier, George Matamis |
2017-10-03 |
| 9754958 |
Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereof |
Jayavel Pachamuthu, Raghuveer S. Makala, Somesh Peri |
2017-09-05 |
| 9698152 |
Three-dimensional memory structure with multi-component contact via structure and method of making thereof |
Somesh Peri, Raghuveer S. Makala, Rahul Sharangpani, Matthias Baenninger, Jayavel Pachamuthu +1 more |
2017-07-04 |
| 9679906 |
Three-dimensional memory devices containing memory block bridges |
Zhenyu Lu, Johann Alsmeier, Daxin Mao, Wenguang Shi, Raghuveer S. Makala +3 more |
2017-06-13 |
| 9659955 |
Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure |
Rahul Sharangpani, Raghuveer S. Makala, Somesh Peri, Senaka Kanakamedala |
2017-05-23 |
| 9646975 |
Lateral stack of cobalt and a cobalt-semiconductor alloy for control gate electrodes in a memory structure |
Somesh Peri, Raghuveer S. Makala |
2017-05-09 |
| 9646990 |
NAND memory strings and methods of fabrication thereof |
Raghuveer S. Makala, Yanli Zhang, Senaka Kanakamedala, Rahul Sharangpani, Yao-Sheng Lee +1 more |
2017-05-09 |
| 9613977 |
Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices |
Rahul Sharangpani, Raghuveer S. Makala, Srikanth Ranganathan, Mark Juanitas, Johann Alsmeier |
2017-04-04 |
| 9576966 |
Cobalt-containing conductive layers for control gate electrodes in a memory structure |
Somesh Peri, Raghuveer S. Makala, Rahul Sharangpani |
2017-02-21 |
| 9570455 |
Metal word lines for three dimensional memory devices |
Rahul Sharangpani, Raghuveer S. Makala, Senaka Kanakamedala, Yao-Sheng Lee, George Matamis |
2017-02-14 |
| 9530785 |
Three-dimensional memory devices having a single layer channel and methods of making thereof |
Zhenyu Lu, Wei Zhao, Ching-Huang Lu, Henry Chien, Yingda Dong +6 more |
2016-12-27 |
| 9524977 |
Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure |
Rahul Sharangpani, Raghuveer S. Makala, Tomohiro Kubo, Junichi Ariyoshi, George Matamis |
2016-12-20 |
| 9515079 |
Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack |
Raghuveer S. Makala, Somesh Peri, Rahul Sharangpani, Yao-Sheng Lee, George Matamis +1 more |
2016-12-06 |
| 9496419 |
Ruthenium nucleation layer for control gate electrodes in a memory structure |
Rahul Sharangpani, Raghuveer S. Makala, George Matamis |
2016-11-15 |
| 9484357 |
Selective blocking dielectric formation in a three-dimensional memory structure |
Raghuveer S. Makala, Rahul Sharangpani, Senaka Kanakamedala, Xiaofeng Liang, George Matamis +1 more |
2016-11-01 |
| 9478558 |
Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer |
Senaka Kanakamedala, Raghuveer S. Makala, Rahul Sharangpani, Yanli Zhang, Yao-Sheng Lee +1 more |
2016-10-25 |
| 9449982 |
Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks |
Zhenyu Lu, James Kai, Raghuveer S. Makala, Yao-Sheng Lee, Jayavel Pachamuthu +2 more |
2016-09-20 |
| 9397046 |
Fluorine-free word lines for three-dimensional memory devices |
Rahul Sharangpani, Raghuveer S. Makala, George Matamis |
2016-07-19 |
| 9379132 |
NAND memory strings and methods of fabrication thereof |
Raghuveer S. Makala, Yanli Zhang, Senaka Kanakamedala, Rahul Sharangpani, Yao-Sheng Lee +1 more |
2016-06-28 |
| 9305849 |
Method of making a three dimensional NAND device |
Masanori Tsutsumi, Shigehiro Fujino, Senaka Kanakamedala, Yanli Zhang, Raghuveer S. Makala +3 more |
2016-04-05 |
| 9236396 |
Three dimensional NAND device and method of making thereof |
Senaka Kanakamedala, Yanli Zhang, Raghuveer S. Makala, Rahul Sharangpani, George Matamis +1 more |
2016-01-12 |