Issued Patents All Time
Showing 25 most recent of 84 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9870945 | Crystalline layer stack for forming conductive layers in a three-dimensional memory structure | Jayavel Pachamuthu, Matthias Baenninger, Stephen Shi, Johann Alsmeier | 2018-01-16 |
| 9853043 | Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material | Zhenyu Lu, Daxin Mao, Tong Zhang, Johann Alsmeier, Wenguang Shi | 2017-12-26 |
| 9728546 | 3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same | Andrey Serov, James Kai, Yanli Zhang, Johann Alsmeier | 2017-08-08 |
| 9728551 | Multi-tier replacement memory stack structure integration scheme | Ching-Huang Lu, Zhenyu Lu, Jixin Yu, Daxin Mao, Johann Alsmeier +1 more | 2017-08-08 |
| 9716101 | Forming 3D memory cells after word line replacement | Zhenyu Lu, Hiro Kinoshita, Daxin Mao, Johann Alsmeier, Wenguang Shi +3 more | 2017-07-25 |
| 9698149 | Non-volatile memory with flat cell structures and air gap isolation | Vinod R. Purayath, George Matamis, James Kai, Yuan Zhang | 2017-07-04 |
| 9672917 | Stacked vertical memory array architectures, systems and methods | Xiying Costa, Yao-Sheng Lee, Yanli Zhang | 2017-06-06 |
| 9666590 | High stack 3D memory and method of making | Jayavel Pachamuthu, Johann Alsmeier | 2017-05-30 |
| 9659956 | Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolation | Jayavel Pachamuthu, Tuan Pham | 2017-05-23 |
| 9620514 | 3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same | James Kai, Yanli Zhang, Johann Alsmeier | 2017-04-11 |
| 9583500 | Multilevel memory stack structure and methods of manufacturing the same | Jayavel Pachamuthu, Johann Alsmeier | 2017-02-28 |
| 9530785 | Three-dimensional memory devices having a single layer channel and methods of making thereof | Sateesh Koka, Zhenyu Lu, Wei Zhao, Ching-Huang Lu, Yingda Dong +6 more | 2016-12-27 |
| 9530790 | Three-dimensional memory device containing CMOS devices over memory stack structures | Zhenyu Lu, Andrew Lin, Johann Alsmeier, Peter Rabkin, Wei Zhao +2 more | 2016-12-27 |
| 9524779 | Three dimensional vertical NAND device with floating gates | James Kai, George Matamis, Thomas Jongwan Kwon, Yao-Sheng Lee | 2016-12-20 |
| 9524976 | Method of integrating select gate source and memory hole for three-dimensional non-volatile memory device | Jayavel Pachamuthu, Johann Alsmeier | 2016-12-20 |
| 9520406 | Method of making a vertical NAND device using sequential etching of multilayer stacks | Raghuveer S. Makala, Yao-Sheng Lee, Jayavel Pachamuthu, Johann Alsmeier | 2016-12-13 |
| 9515080 | Vertical NAND and method of making thereof using sequential stack etching and landing pad | Akira Takahashi, Chi-Ming Wang, Johann Alsmeier, Xiying Costa | 2016-12-06 |
| 9502471 | Multi tier three-dimensional memory devices including vertically shared bit lines | Zhenyu Lu, Johann Alsmeier, Koji Miyata, Tong Zhang, Man Lung Mui +7 more | 2016-11-22 |
| 9466644 | Resistance-switching memory cell with multiple raised structures in a bottom electrode | George Matamis, James Kai, Vinod R. Purayath, Yuan Zhang | 2016-10-11 |
| 9449982 | Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks | Zhenyu Lu, Sateesh Koka, James Kai, Raghuveer S. Makala, Yao-Sheng Lee +2 more | 2016-09-20 |
| 9449981 | Three dimensional NAND string memory devices and methods of fabrication thereof | Jayavel Pachamuthu, Johann Alsmeier | 2016-09-20 |
| 9437813 | Method for forming resistance-switching memory cell with multiple electrodes using nano-particle hard mask | George Matamis, James Kai, Vinod R. Purayath, Yuan Zhang | 2016-09-06 |
| 9379120 | Metal control gate structures and air gap isolation in non-volatile memory | Vinod R. Purayath, Tuan Pham, Hiroyuki Kinoshita, Yuan Zhang, Henry Chin +3 more | 2016-06-28 |
| 9356031 | Three dimensional NAND string memory devices with voids enclosed between control gate electrodes | Yao-Sheng Lee, Jayavel Pachamuthu, Raghuveer S. Makala, George Matamis, Johann Alsmeier | 2016-05-31 |
| 9331181 | Nanodot enhanced hybrid floating gate for non-volatile memory devices | Donovan Lee, James Kai, George Samachisa, George Matamis, Vinod R. Purayath | 2016-05-03 |