XC

Xiying Costa

ST Sandisk Technologies: 31 patents #76 of 2,224Top 4%
S3 Sandisk 3D: 6 patents #75 of 180Top 45%
WT Western Digital Technologies: 1 patents #1,787 of 3,180Top 60%
Overall (All Time): #86,400 of 4,157,543Top 3%
38
Patents All Time

Issued Patents All Time

Showing 1–25 of 38 patents

Patent #TitleCo-InventorsDate
10573388 Non-volatile storage system with adjustable select gates as a function of temperature Mahim Raj Gupta, Mohsen Purahmad, Bo Lei, Joanna Lai 2020-02-25
10388390 Word line dependent pass voltages in non-volatile memory 2019-08-20
10355007 Three-dimensional memory structure having a back gate electrode Dana Lee, Yanli Zhang, Johann Alsmeier, Yingda Dong, Akira Matsudaira 2019-07-16
10283208 Word line dependent pass voltages in non-volatile memory 2019-05-07
10056399 Three-dimensional memory devices containing inter-tier dummy memory cells and methods of making the same Daxin Mao, Christopher J. Petti, Dana Lee, Yao-Sheng Lee 2018-08-21
10049758 Word line dependent pass voltages in non-volatile memory 2018-08-14
9672917 Stacked vertical memory array architectures, systems and methods Henry Chien, Yao-Sheng Lee, Yanli Zhang 2017-06-06
9515080 Vertical NAND and method of making thereof using sequential stack etching and landing pad Akira Takahashi, Chi-Ming Wang, Johann Alsmeier, Henry Chien 2016-12-06
9460799 Recovery of partially programmed block in non-volatile memory Dana Lee, Zhenming Zhou 2016-10-04
9330778 Group word line erase and erase-verify methods for 3D non-volatile memory Alex Mak, Johann Alsmeier, Man Lung Mui 2016-05-03
9331090 Compact three dimensional vertical NAND and method of making thereof Johann Alsmeier, Raghuveer S. Makala, Yanli Zhang 2016-05-03
9240241 Pseudo block operation mode in 3D NAND Alexander Kwok-Tung Mak, Chris Avila, Gautam Dusija, Man Lung Mui 2016-01-19
9177673 Selection of data for redundancy calculation by likely error rate Deepak Raghu, Gautam Dusija, Chris Avila, Yingda Dong, Man Lung Mui +1 more 2015-11-03
9142304 Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current Haibo Li, Masaaki Higashitani, Man Lung Mui 2015-09-22
9136022 Selection of data for redundancy calculation by likely error rate Deepak Raghu, Gautam Dusija, Chris Avila, Yingda Dong, Man Lung Mui +1 more 2015-09-15
9099202 3D stacked non-volatile storage programming to conductive state Andrei Mihnea, Yanli Zhang 2015-08-04
9047973 Group word line erase and erase-verify methods for 3D non-volatile memory Alex Mak, Johann Alsmeier, Man Lung Mui 2015-06-02
9019775 Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current Haibo Li, Masaaki Higashitani, Man Lung Mui 2015-04-28
8934292 Balanced method for programming multi-layer cell memories Yibo Nian, Roy E. Scheuerlein, Tz-Yi Liu, Chandrasekhar Gorla 2015-01-13
8923054 Pseudo block operation mode in 3D NAND Alexander Kwog-Tung Mak, Chris Avila, Gautam Dusija, Man Lung Mui 2014-12-30
8913431 Pseudo block operation mode in 3D NAND Alexander Kwok-Tung Mak, Chris Avila, Gautam Dusija, Man Lung Mui 2014-12-16
8908444 Erase for 3D non-volatile memory with sequential selection of word lines Seung Yu, Roy E. Scheuerlein, Haibo Li, Man Lung Mui 2014-12-09
8908435 Erase operation with controlled select gate voltage for 3D non-volatile memory Haibo Li, Chenfeng Zhang 2014-12-09
8885412 Erase operation with controlled select gate voltage for 3D non-volatile memory Haibo Li, Chenfeng Zhang 2014-11-11
8883589 Counter doping compensation methods to improve diode performance Abhijit Bandyopadhyay, Kun Hou, Brian Le, Yung-Tin Chen 2014-11-11