Issued Patents All Time
Showing 1–25 of 62 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12389604 | Three-dimensional ferroelectric random-access memory (FeRAM) | — | 2025-08-12 |
| 12232327 | Three-dimensional ferroelectric random-access memory (FeRAM) | — | 2025-02-18 |
| 11515330 | Three-dimensional ferroelectric random-access memory (FeRAM) | — | 2022-11-29 |
| 11462567 | Three-dimensional ferroelectric random-access memory (FeRAM) | — | 2022-10-04 |
| 10825834 | Three-dimensional ferroelectric random-access memory (FeRAM) | — | 2020-11-03 |
| 10586582 | Ferroelectric memory and capacitor structure thereof | Fu-Chou Liu | 2020-03-10 |
| 10424598 | Three-dimensional memory device and manufacturing method thereof | Fu-Chou Liu | 2019-09-24 |
| 10403721 | Field effect transistor, memory element and manufacturing method of charge storage structure using paraelectric and ferroelectric material | Fu-Chou Liu | 2019-09-03 |
| 10367004 | Vertical ferroelectric thin film storage transistor and data write and read methods thereof | Fu-Chou Liu | 2019-07-30 |
| 10304512 | Ferroelectric memory, data reading/writing method and manufacturing method thereof and capacitor structure | Fu-Chou Liu | 2019-05-28 |
| 9812204 | Ferroelectric memory cell without a plate line | Tianhong Yan | 2017-11-07 |
| 9653617 | Multiple junction thin film transistor | Guangle Zhou, Ming-Che Wu | 2017-05-16 |
| 9583615 | Vertical transistor and local interconnect structure | Guangle Zhou, Christopher J. Petti | 2017-02-28 |
| 9412845 | Dual gate structure | Wei Wu, Ming-Che Wu | 2016-08-09 |
| 9105576 | Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same | Andrei Mihnea, Roy E. Scheuerlein, Luca Fasoli | 2015-08-11 |
| 9064547 | 3D non-volatile memory having low-current cells and methods | Raul-Adrian Cernea, George Samachisa | 2015-06-23 |
| 8981331 | Memory cells having storage elements that share material layers with steering elements and methods of forming the same | Chuanbin Pan, Andrei Mihnea, Steven Maxwell, Kun Hou | 2015-03-17 |
| 8969845 | Memory cells having storage elements that share material layers with steering elements and methods of forming the same | Chuanbin Pan, Andrei Mihnea, Steven Maxwell, Kun Hou | 2015-03-03 |
| 8933516 | High capacity select switches for three-dimensional structures | Ming-Che Wu, Wei Wu | 2015-01-13 |
| 8884357 | Vertical NAND and method of making thereof using sequential stack etching and landing pad | Chi-Ming Wang, Johann Alsmeier, Henry Chien, Xiying Costa, Christopher J. Petti | 2014-11-11 |
| 8883589 | Counter doping compensation methods to improve diode performance | Xiying Costa, Abhijit Bandyopadhyay, Kun Hou, Brian Le | 2014-11-11 |
| 8879299 | Non-volatile memory cell containing an in-cell resistor | Kun Hou, Zhida Lan, Huiwen Xu | 2014-11-04 |
| 8866124 | Diodes with native oxide regions for use in memory arrays and methods of forming the same | Steven Maxwell, Abhijit Bandyopadhyay, Kun Hou, Er-Xuan Ping, Li Xiao | 2014-10-21 |
| 8841648 | Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same | Andrei Mihnea, Roy E. Scheuerlein, Luca Fasoli | 2014-09-23 |
| 8724369 | Composition of memory cell with resistance-switching layers | Tong Zhang, Timothy J. Minvielle | 2014-05-13 |