Issued Patents All Time
Showing 26–38 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8884357 | Vertical NAND and method of making thereof using sequential stack etching and landing pad | Chi-Ming Wang, Johann Alsmeier, Henry Chien, Yung-Tin Chen, Christopher J. Petti | 2014-11-11 |
| 8878278 | Compact three dimensional vertical NAND and method of making thereof | Johann Alsmeier, Raghuveer S. Makala, Yanli Zhang | 2014-11-04 |
| 8879333 | Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits | Haibo Li, Masaaki Higashitani, Man Lung Mui | 2014-11-04 |
| 8867271 | Threshold voltage adjustment for a select gate transistor in a stacked non-volatile memory device | Haibo Li, Masaaki Higashitani, Man Lung Mui | 2014-10-21 |
| 8861280 | Erase for 3D non-volatile memory with sequential selection of word lines | Seung Yu, Roy E. Scheuerlein, Haibo Li, Man Lung Mui | 2014-10-14 |
| 8848430 | Step soft program for reversible resistivity-switching elements | Roy E. Scheuerlein, Abhijit Bandyopadhyay, Brian Le, Li Xiao, Tao Du +1 more | 2014-09-30 |
| 8824211 | Group word line erase and erase-verify methods for 3D non-volatile memory | Alex Mak, Johann Alsmeier, Man Lung Mui | 2014-09-02 |
| 8787094 | Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits | Haibo Li, Masaaki Higashitani, Man Lung Mui | 2014-07-22 |
| 8737111 | Memory cell with resistance-switching layers | Franz Kreupl, James Kai, Raghuveer S. Makala | 2014-05-27 |
| 8649219 | Erase inhibit for 3D non-volatile memory | Haibo Li | 2014-02-11 |
| 8551855 | Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same | Huiwen Xu, Er-Xuan Ping | 2013-10-08 |
| 8488382 | Erase inhibit for 3D non-volatile memory | Haibo Li | 2013-07-16 |
| 8481396 | Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same | Huiwen Xu, Er-Xuan Ping, Thomas Jongwan Kwon | 2013-07-09 |