Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
JK

James Kai — 153 Patents

STSandisk Technologies: 129 patents #11 of 2,224Top 1%
AMD: 11 patents #1,139 of 9,280Top 15%
S3Sandisk 3D: 8 patents #57 of 180Top 35%
SGSilicon Genesis: 4 patents #13 of 40Top 35%
Santa Clara, CA: #29 of 9,301 inventorsTop 1%
California: #970 of 386,348 inventorsTop 1%
Overall (All Time): #5,988 of 4,157,543Top 1%
153 Patents All Time
James Kai has been granted 153 US patents while listed as an inventor at Sandisk Technologies. The first was granted in 1998 and the most recent in October 2025. James Kai ranks #5,988 of 4,157,543 US inventors in our database (top 0.14%). Patent records list James Kai in Santa Clara, CA, US.

Issued Patents All Time

Showing 1–25 of 153 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
12456499 Three-dimensional memory device including laterally separated source lines and method of making the same Masaaki Higashitani, Johann Alsmeier 2025-10-28
12243593 Low power read method and a memory device capable thereof Xiang Yang, Deepanshu Dutta, Ohwon Kwon, Yuki Mizutani 2025-03-04
12243865 Bonded semiconductor die assembly containing through-stack via structures and methods for making the same Johann Alsmeier, Koichi Matsuno 2025-03-04
12087371 Preventing erase disturb in NAND Yanli Zhang, Johann Alsmeier 2024-09-10
11996153 Three-dimensional memory device with separated contact regions and methods for forming the same Yuki Mizutani, Hisakazu Otoi, Masaaki Higashitani, Hiroyuki Ogawa 2024-05-28
11990185 Dynamic word line reconfiguration for NAND structure Xiang Yang, YenLung Li 2024-05-21
11805649 Three-dimensional memory device with wiggled drain-select-level isolation structure and methods of manufacturing the same Srinivas Pulugurtha, Johann Alsmeier, Yanli Zhang 2023-10-31
11587920 Bonded semiconductor die assembly containing through-stack via structures and methods for making the same Johann Alsmeier, Koichi Matsuno 2023-02-21
11552094 Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same Murshed Chowdhury, Masaaki Higashitani, Johann Alsmeier 2023-01-10
11489043 Three-dimensional memory device employing thinned insulating layers and methods for forming the same Senaka Kanakamedala, Johann Alsmeier 2022-11-01
11481154 Non-volatile memory with memory array between circuits Deepanshu Dutta, Johann Alsmeier, Jian Chen 2022-10-25
11398496 Three-dimensional memory device employing thinned insulating layers and methods for forming the same Senaka Kanakamedala, Johann Alsmeier 2022-07-26
11380709 Three dimensional ferroelectric memory Yingda Dong, Christopher J. Petti 2022-07-05
11355486 Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer Yuki Mizutani, Masaaki Higashitani 2022-06-07
11201107 Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer Teruo Okina, Akio Nishida 2021-12-14
11195857 Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer Ching-Huang Lu, Murshed Chowdhury, Johann Alsmeier 2021-12-07
11195781 Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer Teruo Okina, Akio Nishida 2021-12-07
11127729 Method for removing a bulk substrate from a bonded assembly of wafers Murshed Chowdhury, Koichi Matsuno, Johann Alsmeier 2021-09-21
11043455 Three-dimensional memory device including self-aligned dielectric isolation regions for connection via structures and method of making the same Johann Alsmeier, Jixin Yu 2021-06-22
11037943 Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same Muneyuki Imai 2021-06-15
11018153 Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes Johann Alsmeier, Murshed Chowdhury 2021-05-25
10985169 Three-dimensional device with bonded structures including a support die and methods of making the same Murshed Chowdhury, Koichi Matsuno, Johann Alsmeier 2021-04-20
10950626 Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes Johann Alsmeier, Murshed Chowdhury, Raiden Matsuno 2021-03-16
10943917 Three-dimensional memory device with drain-select-level isolation structures and method of making the same Takaaki Iwai, Makoto Koto, Sayako Nagamine, Ching-Huang Lu, Wei Zhao +1 more 2021-03-09
10840260 Through-array conductive via structures for a three-dimensional memory device and methods of making the same Murshed Chowdhury, Fumiaki Toyama, Johann Alsmeier, Masaaki Higashitani 2020-11-17