Issued Patents All Time
Showing 51–75 of 152 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10038006 | Through-memory-level via structures for a three-dimensional memory device | Yoko Furihata, Jixin Yu, Hiroyuki Ogawa, Jin Liu, Johann Alsmeier | 2018-07-31 |
| 10020363 | Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device | Hiroyuki Ogawa, Yasuo Kasagi, Satoshi Shimizu, Kazuyo Matsumoto, Yohei Masamori +2 more | 2018-07-10 |
| 10008570 | Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device | Jixin Yu, Kento KITAMURA, Tong Zhang, Chun Ge, Yanli Zhang +6 more | 2018-06-26 |
| 9985098 | Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device | Kazuyo Matsumoto, Yasuo Kasagi, Satoshi Shimizu, Hiroyuki Ogawa, Yohei Masamori +2 more | 2018-05-29 |
| 9972640 | Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof | Murshed Chowdhury, Jin Liu, Johann Alsmeier | 2018-05-15 |
| 9959932 | Grouping memory cells into sub-blocks for program speed uniformity | Zhengyi Zhang, Yingda Dong, Johann Alsmeier | 2018-05-01 |
| 9953992 | Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof | Hiroyuki Ogawa | 2018-04-24 |
| 9935123 | Within array replacement openings for a three-dimensional memory device | Masatoshi Nishikawa, Masafumi Miyamoto | 2018-04-03 |
| 9922987 | Three-dimensional memory device containing separately formed drain select transistors and method of making thereof | Yuki Mizutani, Fumiaki Toyama, Shigehiro Fujino, Johann Alsmeier | 2018-03-20 |
| 9917100 | Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same | Tong Zhang, Johann Alsmeier, Jin Liu, Yanli Zhang | 2018-03-13 |
| 9831266 | Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same | Johann Alsmeier, Jin Liu, Yanli Zhang | 2017-11-28 |
| 9824966 | Three-dimensional memory device containing a lateral source contact and method of making the same | Senaka Kanakamedala, Raghuveer S. Makala, Yanli Zhang, Rahul Sharangpani, Yao-Sheng Lee | 2017-11-21 |
| 9818759 | Through-memory-level via structures for a three-dimensional memory device | Jin Liu, Johann Alsmeier, Jixin Yu, Yoko Furihata, Hiroyuki Ogawa | 2017-11-14 |
| 9818693 | Through-memory-level via structures for a three-dimensional memory device | Fumiaki Toyama, Hiroyuki Ogawa, Yoko Furihata, Yuki Mizutani, Jixin Yu +2 more | 2017-11-14 |
| 9805805 | Three-dimensional memory device with charge carrier injection wells for vertical channels and method of making and using thereof | Yanli Zhang, Johann Alsmeier | 2017-10-31 |
| 9728546 | 3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same | Andrey Serov, Yanli Zhang, Henry Chien, Johann Alsmeier | 2017-08-08 |
| 9698149 | Non-volatile memory with flat cell structures and air gap isolation | Vinod R. Purayath, George Matamis, Henry Chien, Yuan Zhang | 2017-07-04 |
| 9620514 | 3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same | Yanli Zhang, Henry Chien, Johann Alsmeier | 2017-04-11 |
| 9576975 | Monolithic three-dimensional NAND strings and methods of fabrication thereof | Yanli Zhang, Raghuveer S. Makala, Jin Liu, Murshed Chowdhury, Camilla Huang +1 more | 2017-02-21 |
| 9552991 | Trench vertical NAND and method of making thereof | Akira Matsudaira, Yuan Zhang, Vinod R. Purayath, Donovan Lee | 2017-01-24 |
| 9548311 | Non-volatile storage element with suspended charge storage region | Donovan Lee, Vinod R. Purayath | 2017-01-17 |
| 9524779 | Three dimensional vertical NAND device with floating gates | Henry Chien, George Matamis, Thomas Jongwan Kwon, Yao-Sheng Lee | 2016-12-20 |
| 9502471 | Multi tier three-dimensional memory devices including vertically shared bit lines | Zhenyu Lu, Henry Chien, Johann Alsmeier, Koji Miyata, Tong Zhang +7 more | 2016-11-22 |
| 9466644 | Resistance-switching memory cell with multiple raised structures in a bottom electrode | George Matamis, Vinod R. Purayath, Yuan Zhang, Henry Chien | 2016-10-11 |
| 9449982 | Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks | Zhenyu Lu, Sateesh Koka, Raghuveer S. Makala, Yao-Sheng Lee, Jayavel Pachamuthu +2 more | 2016-09-20 |