Issued Patents All Time
Showing 76–100 of 152 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9437813 | Method for forming resistance-switching memory cell with multiple electrodes using nano-particle hard mask | George Matamis, Vinod R. Purayath, Yuan Zhang, Henry Chien | 2016-09-06 |
| 9379120 | Metal control gate structures and air gap isolation in non-volatile memory | Vinod R. Purayath, Tuan Pham, Hiroyuki Kinoshita, Yuan Zhang, Henry Chin +3 more | 2016-06-28 |
| 9349740 | Non-volatile storage element with suspended charge storage region | Donovan Lee, Vinod R. Purayath | 2016-05-24 |
| 9331181 | Nanodot enhanced hybrid floating gate for non-volatile memory devices | Donovan Lee, George Samachisa, Henry Chien, George Matamis, Vinod R. Purayath | 2016-05-03 |
| 9252151 | Three dimensional NAND device with birds beak containing floating gates and method of making thereof | Henry Chien, Donovan Lee, Vinod R. Purayath, Yuan Zhang, George Matamis | 2016-02-02 |
| 9230971 | NAND string containing self-aligned control gate sidewall cladding | Donovan Lee, Vinod R. Purayath, George Matamis | 2016-01-05 |
| 9224746 | Inverted-T word line and formation for non-volatile storage | Vinod R. Purayath, Donovan Lee, Yuan Zhang, Akira Matsudaira | 2015-12-29 |
| 9177808 | Memory device with control gate oxygen diffusion control and method of making thereof | Vinod R. Purayath, Donovan Lee, Akira Matsudaira, Yuan Zhang | 2015-11-03 |
| 9165940 | Three dimensional NAND device with silicide containing floating gates and method of making thereof | Henry Chien, Johann Alsmeier, George Samachisa, Henry Chin, George Matamis +3 more | 2015-10-20 |
| 9123890 | Resistance-switching memory cell with multiple raised structures in a bottom electrode | George Matamis, Vinod R. Purayath, Yuan Zhang, Henry Chien | 2015-09-01 |
| 9099496 | Method of forming an active area with floating gate negative offset profile in FG NAND memory | Ming Tian, Jayavel Pachamuthu, Atsushi Suyama, Raghuveer S. Makala, Yao-Sheng Lee +4 more | 2015-08-04 |
| 9030016 | Semiconductor device with copper interconnects separated by air gaps | Vinod R. Purayath, Jayavel Pachamuthu, Jarrett Jun Liang, George Matamis | 2015-05-12 |
| 9029936 | Non-volatile memory structure containing nanodots and continuous metal layer charge traps and method of making thereof | Vinod R. Purayath, George Samachisa, George Matamis, Yuan Zhang | 2015-05-12 |
| 8987802 | Method for using nanoparticles to make uniform discrete floating gate layer | Donovan Lee, Vinod R. Purayath, George Matamis, Steven J. Radigan | 2015-03-24 |
| 8987087 | Three dimensional NAND device with birds beak containing floating gates and method of making thereof | Henry Chien, Donovan Lee, Vinod R. Purayath, Yuan Zhang, George Matamis | 2015-03-24 |
| 8969153 | NAND string containing self-aligned control gate sidewall cladding | Donovan Lee, Vinod R. Purayath, George Matamis | 2015-03-03 |
| 8946803 | Method of forming a floating gate with a wide base and a narrow stem | George Matamis, Henry Chien, Vinod R. Purayath, Takashi Orimoto | 2015-02-03 |
| 8946022 | Integrated nanostructure-based non-volatile memory fabrication | Vinod R. Purayath, Masaaki Higashitani, Takashi Orimoto, George Matamis, Henry Chien | 2015-02-03 |
| 8946048 | Method of fabricating non-volatile memory with flat cell structures and air gap isolation | Vinod R. Purayath, George Matamis, Henry Chien, Yuan Zhang | 2015-02-03 |
| 8928061 | Three dimensional NAND device with silicide containing floating gates | Henry Chien, Johann Alsmeier, George Samachisa, Henry Chin, George Matamis +3 more | 2015-01-06 |
| 8877586 | Process for forming resistive switching memory cells using nano-particles | Takashi Orimoto, Vinod R. Purayath, George Matamis | 2014-11-04 |
| 8822288 | NAND memory device containing nanodots and method of making thereof | Vinod R. Purayath, George Samachisa, George Matamis, Yuan Zhang | 2014-09-02 |
| 8823075 | Select gate formation for nanodot flat cell | Vinod R. Purayath, Yuan Zhang, Donovan Lee, George Matamis | 2014-09-02 |
| 8737111 | Memory cell with resistance-switching layers | Franz Kreupl, Xiying Costa, Raghuveer S. Makala | 2014-05-27 |
| 8710481 | Non-volatile memory cell containing a nano-rail electrode | Henry Chien, George Matamis, Vinod R. Purayath | 2014-04-29 |