Issued Patents All Time
Showing 1–25 of 55 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9177995 | Vertical interconnect structure, memory device and associated production method | Martin Gutsche, Harald Seidl | 2015-11-03 |
| 9034689 | Non-volatile storage with metal oxide switching element and methods for fabricating the same | Deepak C. Sekar, Peter Rabkin, Chu-Chen Fu | 2015-05-19 |
| 8987046 | Trap passivation in memory cell with metal oxide switching element | Deepak C. Sekar, Raghuveer S. Makala, Peter Rabkin | 2015-03-24 |
| 8912654 | Semiconductor chip with integrated via | Harry Hedler | 2014-12-16 |
| 8772749 | Bottom electrodes for use with metal oxide resistivity switching layers | Deepak C. Sekar, Raghuveer S. Makala | 2014-07-08 |
| 8742387 | Resistive memory devices with improved resistive changing elements | Thomas Happ, Jan Boris Philipp, Petra Majewski | 2014-06-03 |
| 8737111 | Memory cell with resistance-switching layers | Xiying Costa, James Kai, Raghuveer S. Makala | 2014-05-27 |
| 8686419 | Structure and fabrication method for resistance-change memory cell in 3-D memory | Deepak C. Sekar | 2014-04-01 |
| 8664657 | Electrical circuit with a nanostructure and method for producing a contact connection of a nanostructure | Georg Duesberg, Robert Seidel, Gernot Steinlesberger | 2014-03-04 |
| 8624293 | Carbon/tunneling-barrier/carbon diode | Abhijit Bandyopadhyay, Andrei Mihnea, Li Xiao | 2014-01-07 |
| 8520424 | Composition of memory cell with resistance-switching layers | Abhijit Bandyopadhyay, Yung-Tin Chen, Chu-Chen Fu, Wipul Pemsiri Jayasekara, James Kai +4 more | 2013-08-27 |
| 8503229 | P-/Metal floating gate non-volatile storage element | Sanghyun Lee, Mohan Dunga, Masaaki Higashitani, Tuan Pham | 2013-08-06 |
| 8487292 | Resistance-switching memory cell with heavily doped metal oxide layer | Deepak C. Sekar | 2013-07-16 |
| 8471360 | Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same | Er-Xuan Ping, Jingyan Zhang, Huiwen Xu | 2013-06-25 |
| 8435831 | Non-volatile storage with metal oxide switching element and methods for fabricating the same | Deepak C. Sekar, Raghuveer S. Makala, Peter Rabkin | 2013-05-07 |
| 8420526 | Vertical interconnect structure, memory device and associated production method | Martin Gutsche, Harald Seidl | 2013-04-16 |
| 8395926 | Memory cell with resistance-switching layers and lateral arrangement | Ritu Shrivastava | 2013-03-12 |
| 8395927 | Memory cell with resistance-switching layers including breakdown layer | Chu-Chen Fu, Yibo Nian | 2013-03-12 |
| 8354660 | Bottom electrodes for use with metal oxide resistivity switching layers | Deepak C. Sekar, Raghuveer S. Makala | 2013-01-15 |
| 8319259 | Semiconductor power switch having nanowires | Robert Seidel | 2012-11-27 |
| 8254166 | Integrated circuit including doped semiconductor line having conductive cladding | Ulrich Klosterman, Ulrike Gruening-von Schwerin | 2012-08-28 |
| 8237146 | Memory cell with silicon-containing carbon switching layer and methods for forming the same | Jingyan Zhang, Huiwen Xu | 2012-08-07 |
| 8216862 | Forming and training processes for resistance-change memory cell | Deepak C. Sekar | 2012-07-10 |
| 8216639 | Methods for elimination or reduction of oxide and/or soot deposition in carbon containing layers | Maik Liebau, Georg Duesberg, Eugen Unger | 2012-07-10 |
| 8097872 | Modifiable gate stack memory element | — | 2012-01-17 |