Issued Patents All Time
Showing 25 most recent of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11127683 | Semiconductor structure with substantially straight contact profile | Ronald G. Naumann, Matthias Zinke, Tobias Barchewitz | 2021-09-21 |
| 10644099 | Three-dimensional (3D) metal-insulator-metal capacitor (MIMCAP) and method | Thomas Gregory McKay, Tibor Bolom | 2020-05-05 |
| 9685497 | Embedded metal-insulator-metal capacitor | Torsten Huisinga | 2017-06-20 |
| 9478602 | Method of forming an embedded metal-insulator-metal (MIM) capacitor | Torsten Huisinga | 2016-10-25 |
| 9287109 | Methods of forming a protection layer to protect a metal hard mask layer during lithography reworking processes | Torsten Huisinga, Keith Donegan | 2016-03-15 |
| 8883610 | Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal lines | Markus Nopper, Axel Preusse | 2014-11-11 |
| 8741770 | Semiconductor device and method for patterning vertical contacts and metal lines in a common etch process | Ralf Richter, Juergen Boemmels, Thomas Foltyn | 2014-06-03 |
| 8664657 | Electrical circuit with a nanostructure and method for producing a contact connection of a nanostructure | Georg Duesberg, Franz Kreupl, Gernot Steinlesberger | 2014-03-04 |
| 8580684 | Contact elements of semiconductor devices comprising a continuous transition to metal lines of a metallization layer | Kai Frohberg, Carsten Peters | 2013-11-12 |
| 8420533 | Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask rounding | Thomas Werner | 2013-04-16 |
| 8389401 | Contact elements of semiconductor devices formed on the basis of a partially applied activation layer | Markus Nopper, Axel Preusse | 2013-03-05 |
| 8344474 | Microstructure device including a metallization structure with self-aligned air gaps and refilled air gap exclusion zones | Thomas Werner | 2013-01-01 |
| 8338314 | Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistors | Ralf Richter, Heike Salz | 2012-12-25 |
| 8319259 | Semiconductor power switch having nanowires | Franz Kreupl | 2012-11-27 |
| 8314494 | Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devices | Markus Nopper, Axel Preusse | 2012-11-20 |
| 8293641 | Nano imprint technique with increased flexibility with respect to alignment and feature shaping | Carsten Peters, Frank Feustel | 2012-10-23 |
| 8198190 | Semiconductor device and method for patterning vertical contacts and metal lines in a common etch process | Ralf Richter, Juergen Boemmels, Thomas Foltyn | 2012-06-12 |
| 8163594 | Semiconductor device comprising a carbon-based material for through hole vias | Frank Feustel, Ralf Richter | 2012-04-24 |
| 8048796 | Microstructure device including a metallization structure with self-aligned air gaps formed based on a sacrificial material | Thomas Werner | 2011-11-01 |
| 8039398 | Method of reducing non-uniformities during chemical mechanical polishing of excess metal in a metallization level of microstructure devices | Frank Feustel, Juergen Boemmels | 2011-10-18 |
| 7928004 | Nano imprint technique with increased flexibility with respect to alignment and feature shaping | Carsten Peters, Frank Feustel | 2011-04-19 |
| 7875514 | Technique for compensating for a difference in deposition behavior in an interlayer dielectric material | Ralf Richter, Carsten Peters | 2011-01-25 |
| 7785956 | Technique for compensating for a difference in deposition behavior in an interlayer dielectric material | Ralf Richter, Carsten Peters | 2010-08-31 |
| 7745327 | Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regime | Axel Preusse, Michael Friedemann, Berit Freudenberg | 2010-06-29 |
| 7646045 | Method for fabricating a nanoelement field effect transistor with surrounded gate structure | Franz Kreupl | 2010-01-12 |