Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9006114 | Method for selectively removing a spacer in a dual stress liner approach | Kai Frohberg, Volker Grimm, Heike Berthold | 2015-04-14 |
| 8390127 | Contact trenches for enhancing stress transfer in closely spaced transistors | Andy Wei, Jan Hoentschel | 2013-03-05 |
| 8338314 | Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistors | Ralf Richter, Robert Seidel | 2012-12-25 |
| 8034726 | Interlayer dielectric material in a semiconductor device comprising a doublet structure of stressed materials | Ralf Richter, Michael Finken, Joerg Hohage | 2011-10-11 |
| 7883629 | Technique for patterning differently stressed layers formed above transistors by enhanced etch control strategies | Matthias Schaller, Ralf Richter, Sylvio Mattick | 2011-02-08 |
| 7763507 | Stressed interlayer dielectric with reduced probability for void generation in a semiconductor device by using an intermediate etch control layer of increased thickness | Ralf Richter, Thorsten Kammler, Volker Grimm | 2010-07-27 |
| 7700377 | Method for reducing etch-induced process uniformities by omitting deposition of an endpoint detection layer during patterning of stressed overlayers in a semiconductor device | Ralf Richter, Matthias Schaller | 2010-04-20 |
| 7678690 | Semiconductor device comprising a contact structure with increased etch selectivity | Ralf Richter, Carsten Peters, Matthias Schaller | 2010-03-16 |
| 7608501 | Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stress | Kai Frohberg, Carsten Peters, Matthias Schaller | 2009-10-27 |
| 7550396 | Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device | Kai Frohberg, Volker Grimm, Sven Mueller, Matthias Lehr, Ralf Richter +4 more | 2009-06-23 |
| 7482219 | Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layer | Kai Frohberg, Carsten Peters, Matthias Schaller | 2009-01-27 |
| 7416973 | Method of increasing the etch selectivity in a contact structure of semiconductor devices | Carsten Peters, Ralf Richter, Matthias Schaller | 2008-08-26 |