HS

Heike Salz

AM AMD: 9 patents #1,329 of 9,279Top 15%
Globalfoundries: 3 patents #1,029 of 4,424Top 25%
Overall (All Time): #420,359 of 4,157,543Top 15%
12
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
9006114 Method for selectively removing a spacer in a dual stress liner approach Kai Frohberg, Volker Grimm, Heike Berthold 2015-04-14
8390127 Contact trenches for enhancing stress transfer in closely spaced transistors Andy Wei, Jan Hoentschel 2013-03-05
8338314 Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistors Ralf Richter, Robert Seidel 2012-12-25
8034726 Interlayer dielectric material in a semiconductor device comprising a doublet structure of stressed materials Ralf Richter, Michael Finken, Joerg Hohage 2011-10-11
7883629 Technique for patterning differently stressed layers formed above transistors by enhanced etch control strategies Matthias Schaller, Ralf Richter, Sylvio Mattick 2011-02-08
7763507 Stressed interlayer dielectric with reduced probability for void generation in a semiconductor device by using an intermediate etch control layer of increased thickness Ralf Richter, Thorsten Kammler, Volker Grimm 2010-07-27
7700377 Method for reducing etch-induced process uniformities by omitting deposition of an endpoint detection layer during patterning of stressed overlayers in a semiconductor device Ralf Richter, Matthias Schaller 2010-04-20
7678690 Semiconductor device comprising a contact structure with increased etch selectivity Ralf Richter, Carsten Peters, Matthias Schaller 2010-03-16
7608501 Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stress Kai Frohberg, Carsten Peters, Matthias Schaller 2009-10-27
7550396 Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device Kai Frohberg, Volker Grimm, Sven Mueller, Matthias Lehr, Ralf Richter +4 more 2009-06-23
7482219 Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layer Kai Frohberg, Carsten Peters, Matthias Schaller 2009-01-27
7416973 Method of increasing the etch selectivity in a contact structure of semiconductor devices Carsten Peters, Ralf Richter, Matthias Schaller 2008-08-26