Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
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Heike Salz — 12 Patents

AMD: 9 patents #1,428 of 9,280Top 20%
Globalfoundries: 3 patents #1,029 of 4,424Top 25%
Radebeul, DE: #26 of 243 inventorsTop 15%
Overall (All Time): #396,045 of 4,157,543Top 10%
12 Patents All Time
Heike Salz has been granted 12 US patents while listed as an inventor at AMD. The first was granted in 2008 and the most recent in April 2015. Heike Salz ranks #396,045 of 4,157,543 US inventors in our database (top 9.5%). Patent records list Heike Salz in Radebeul, DE.

Patents per Year

Patents granted per year, 2008 to 2015Bar chart with a peak of 3 patents in 2009.peak 32008: 1 patents20082009: 3 patents20092010: 3 patents20102011: 2 patents20112012: 1 patents20122013: 1 patents20132015: 1 patents2015

Issued Patents All Time

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
9006114 Method for selectively removing a spacer in a dual stress liner approach Kai Frohberg, Volker Grimm, Heike Berthold 2015-04-14 $1,171,000
8390127 Contact trenches for enhancing stress transfer in closely spaced transistors Andy Wei, Jan Hoentschel 2013-03-05 $2,179,000
8338314 Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistors Ralf Richter, Robert Seidel 2012-12-25
8034726 Interlayer dielectric material in a semiconductor device comprising a doublet structure of stressed materials Ralf Richter, Michael Finken, Joerg Hohage 2011-10-11 $4,727,000
7883629 Technique for patterning differently stressed layers formed above transistors by enhanced etch control strategies Matthias Schaller, Ralf Richter, Sylvio Mattick 2011-02-08 $6,374,000
7763507 Stressed interlayer dielectric with reduced probability for void generation in a semiconductor device by using an intermediate etch control layer of increased thickness Ralf Richter, Thorsten Kammler, Volker Grimm 2010-07-27 $6,860,000
7700377 Method for reducing etch-induced process uniformities by omitting deposition of an endpoint detection layer during patterning of stressed overlayers in a semiconductor device Ralf Richter, Matthias Schaller 2010-04-20 $17,225,000
7678690 Semiconductor device comprising a contact structure with increased etch selectivity Ralf Richter, Carsten Peters, Matthias Schaller 2010-03-16 $8,771,000
7608501 Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stress Kai Frohberg, Carsten Peters, Matthias Schaller 2009-10-27 $8,132,000
7550396 Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device Kai Frohberg, Volker Grimm, Sven Mueller, Matthias Lehr, Ralf Richter +4 more 2009-06-23 $21,858,000
7482219 Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layer Kai Frohberg, Carsten Peters, Matthias Schaller 2009-01-27 $7,357,000
7416973 Method of increasing the etch selectivity in a contact structure of semiconductor devices Carsten Peters, Ralf Richter, Matthias Schaller 2008-08-26 $4,862,000