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Home › Method for reducing etch-induced process uniformities by omitting deposition of an endpoint detection layer during patterning of stressed overlayers in a semiconductor device

Method for reducing etch-induced process uniformities by omitting deposition of an endpoint detection layer during patterning of stressed overlayers in a semiconductor device

US Patent 7700377 · Granted Apr 20, 2010

Estimated economic value: $17,225,000 ⓘ

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