| 8925396 |
Method and system for particles analysis in microstructure devices by isolating particles |
Petra Hetzer, Dmytro Chumakov |
2015-01-06 |
$1,986,000 |
| 8888947 |
Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurements |
Uwe Schulze, Mathias Baranyai |
2014-11-18 |
$1,887,000 |
| 8835245 |
Semiconductor device comprising self-aligned contact elements |
Peter Baars, Till Schloesser, Frank Jakubowski, Andy Wei, Richard J. Carter |
2014-09-16 |
$1,458,000 |
| 8658494 |
Dual contact metallization including electroless plating in a semiconductor device |
Kai Frohberg, Juergen Boemmels, Sven Mueller |
2014-02-25 |
$3,030,000 |
| 8575041 |
Repair of damaged surface areas of sensitive low-K dielectrics of microstructure devices after plasma processing by in situ treatment |
Daniel Fischer, Thomas Oszinda |
2013-11-05 |
$2,151,000 |
| 8440579 |
Re-establishing surface characteristics of sensitive low-k dielectrics in microstructure device by using an in situ surface modification |
Daniel Fischer, Thomas Oszinda |
2013-05-14 |
$3,052,000 |
| 8435885 |
Method and system for extracting samples after patterning of microstructure devices |
Dmytro Chumakov, Petra Hetzer |
2013-05-07 |
$6,009,000 |
| 8423320 |
Method and system for quantitative inline material characterization in semiconductor production processes based on structural measurements and related models |
Thomas Oszinda, Christin Bartsch, Daniel Fischer |
2013-04-16 |
$3,756,000 |
| 8399358 |
Establishing a hydrophobic surface of sensitive low-k dielectrics of microstructure devices by in situ plasma treatment |
Daniel Fischer |
2013-03-19 |
$3,232,000 |
| 8338293 |
Method of reducing erosion of a metal cap layer during via patterning in semiconductor devices |
Christin Bartsch, Daniel Fischer |
2012-12-25 |
|
| 8110498 |
Method for passivating exposed copper surfaces in a metallization layer of a semiconductor device |
Daniel Fischer, Susanne Leppack |
2012-02-07 |
$12,466,000 |
| 8101524 |
Technique for enhancing the fill capabilities in an electrochemical deposition process by edge rounding of trenches |
Kai Frohberg, Massud Aminpur |
2012-01-24 |
$3,915,000 |
| 8062982 |
High yield plasma etch process for interlayer dielectrics |
Daniel Fischer, Matthias Lehr, Kornelia Dittmar |
2011-11-22 |
$5,972,000 |
| 7986040 |
Method of reducing erosion of a metal cap layer during via patterning in semiconductor devices |
Christin Bartsch, Daniel Fischer |
2011-07-26 |
$4,784,000 |
| 7883629 |
Technique for patterning differently stressed layers formed above transistors by enhanced etch control strategies |
Heike Salz, Ralf Richter, Sylvio Mattick |
2011-02-08 |
$6,374,000 |
| 7763547 |
Technique for enhancing process flexibility during the formation of vias and trenches in low-k interlayer dielectrics |
Thomas Werner, Massud Aminpur |
2010-07-27 |
$6,860,000 |
| 7763532 |
Technique for forming a dielectric etch stop layer above a structure including closely spaced lines |
Kai Frohberg, Roberto Klinger |
2010-07-27 |
$6,860,000 |
| 7704889 |
Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurements |
Uwe Schulze, Mathias Baranyai |
2010-04-27 |
$10,775,000 |
| 7700377 |
Method for reducing etch-induced process uniformities by omitting deposition of an endpoint detection layer during patterning of stressed overlayers in a semiconductor device |
Ralf Richter, Heike Salz |
2010-04-20 |
$17,225,000 |
| 7678690 |
Semiconductor device comprising a contact structure with increased etch selectivity |
Ralf Richter, Carsten Peters, Heike Salz |
2010-03-16 |
$8,771,000 |
| 7611991 |
Technique for increasing adhesion of metallization layers by providing dummy vias |
Ralf Richter, Ellen Claus, Eckhard Langer |
2009-11-03 |
$7,148,000 |
| 7608501 |
Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stress |
Kai Frohberg, Carsten Peters, Heike Salz |
2009-10-27 |
$8,132,000 |
| 7592258 |
Metallization layer of a semiconductor device having differently thick metal lines and a method of forming the same |
Matthias Lehr, Carsten Peters |
2009-09-22 |
$35,579,000 |
| 7550396 |
Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device |
Kai Frohberg, Volker Grimm, Sven Mueller, Matthias Lehr, Ralf Richter +4 more |
2009-06-23 |
$21,858,000 |
| 7517816 |
Technique for creating different mechanical stress in different channel regions by forming an etch stop layer having differently modified intrinsic stress |
Kai Frohberg, Massud Aminpur |
2009-04-14 |
$5,338,000 |
