| 12426307 |
Dual metal gate structures on nanoribbon semiconductor devices |
Yang-Chun Cheng, Dax M. Crum |
2025-09-23 |
|
| 12376353 |
Source/drain regions in integrated circuit structures |
Sean T. Ma, Guillaume Bouche |
2025-07-29 |
|
| 12327791 |
Integrated circuit structures with gate cuts above buried power rails |
— |
2025-06-10 |
|
| 12328936 |
Gate spacing in integrated circuit structures |
Guillaume Bouche, Sean T. Ma |
2025-06-10 |
|
| 12315805 |
Self-aligned lateral contacts |
Yang-Chun Cheng, Shaestagir Chowdhury, Guillaume Bouche |
2025-05-27 |
|
| 12237388 |
Transistor arrangements with stacked trench contacts and gate straps |
Changyok Park, Guillaume Bouche, Hyuk-Ju Ryu, Charles H. Wallace, Mohit K. HARAN |
2025-02-25 |
|
| 12211898 |
Device contact sizing in integrated circuit structures |
Guillaume Bouche, Sean T. Ma |
2025-01-28 |
|
| 12211786 |
Stacked vias with bottom portions formed using selective growth |
Guillaume Bouche |
2025-01-28 |
|
| 12199161 |
Contact over active gate structures with tapered gate or trench contact for advanced integrated circuit structure fabrication |
Charles H. Wallace, Mohit K. HARAN |
2025-01-14 |
|
| 12148751 |
Use of a placeholder for backside contact formation for transistor arrangements |
Anand S. Murthy, Mauro J. Kobrinsky, Guillaume Bouche |
2024-11-19 |
$25,575,000 |
| 12094822 |
Buried power rails with self-aligned vias to trench contacts |
Guillaume Bouche, Changyok Park |
2024-09-17 |
$19,251,000 |
| 11973121 |
Device contacts in integrated circuit structures |
Guillaume Bouche, Mwilwa Tambwe, Sean T. Ma, Piyush Mohan Sinha |
2024-04-30 |
$26,151,000 |
| 11916010 |
Back end of line integration for self-aligned vias |
Guillaume Bouche |
2024-02-27 |
$28,450,000 |
| 11916106 |
Source/drain regions in integrated circuit structures |
Sean T. Ma, Guillaume Bouche |
2024-02-27 |
$28,450,000 |
| 11749715 |
Isolation regions in integrated circuit structures |
Guillaume Bouche, Sean T. Ma |
2023-09-05 |
$19,899,000 |
| 11508847 |
Transistor arrangements with metal gate cuts and recessed power rails |
Sean T. Ma, Piyush Mohan Sinha |
2022-11-22 |
$12,862,000 |
| 11482524 |
Gate spacing in integrated circuit structures |
Guillaume Bouche, Sean T. Ma |
2022-10-25 |
$11,792,000 |
| 11450736 |
Source/drain regions in integrated circuit structures |
Sean T. Ma, Guillaume Bouche |
2022-09-20 |
$15,654,000 |
| 11430866 |
Device contact sizing in integrated circuit structures |
Guillaume Bouche, Sean T. Ma |
2022-08-30 |
$13,077,000 |
| 11342409 |
Isolation regions in integrated circuit structures |
Guillaume Bouche, Sean T. Ma |
2022-05-24 |
$18,289,000 |
| 11264463 |
Multiple fin finFET with low-resistance gate structure |
Guillaume Bouche |
2022-03-01 |
$213,052,000 |
| 10700170 |
Multiple fin finFET with low-resistance gate structure |
Guillaume Bouche |
2020-06-30 |
$39,055,000 |
| 10644136 |
Merged gate and source/drain contacts in a semiconductor device |
Guillaume Bouche |
2020-05-05 |
$25,055,000 |
| 10396026 |
Precut metal lines |
Guillaume Bouche, Mark A. Zaleski |
2019-08-27 |
$31,250,000 |
| 10262941 |
Devices and methods for forming cross coupled contacts |
Guillaume Bouche, Jason E. Stephens, Tuhin Guha Neogi, Kai Sun, Deniz E. Civay +1 more |
2019-04-16 |
$37,439,000 |
