| 12316251 |
Variable-speed drive for single-phase asynchronous motors |
— |
2025-05-27 |
|
| 8440516 |
Method of forming a field effect transistor |
Andy Wei, Thorsten Kammler, Jan Hoentschel |
2013-05-14 |
$3,052,000 |
| 8288256 |
Enhancing transistor characteristics by a late deep implantation in combination with a diffusion-free anneal process |
Thomas Feudel, Rolf Stephan |
2012-10-16 |
$3,691,000 |
| 8274120 |
Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions |
Andy Wei, Thorsten Kammler, Jan Hoentschel, Peter Javorka, Joe Bloomquist |
2012-09-25 |
$4,174,000 |
| 8188871 |
Drive current adjustment for transistors by local gate engineering |
Patrick Press, Karsten Wieczorek, Kerstin Ruttloff |
2012-05-29 |
$10,485,000 |
| 8138571 |
Semiconductor device comprising isolation trenches inducing different types of strain |
Christoph Schwan, Joe Bloomquist, Peter Javorka, Sven Beyer, Markus Forsberg +2 more |
2012-03-20 |
$9,207,000 |
| 8101512 |
Method of enhancing lithography capabilities during gate formation in semiconductors having a pronounced surface topography |
Martin Gerhardt, Martin Trentzsch, Markus Forsberg |
2012-01-24 |
$3,915,000 |
| 8097542 |
Etch stop layer of reduced thickness for patterning a dielectric material in a contact level of closely spaced transistors |
Karsten Wieczorek, Peter Huebler, Kerstin Ruttloff |
2012-01-17 |
$6,179,000 |
| 8039335 |
Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain |
Sven Beyer, Patrick Press, Wolfgang Buchholtz |
2011-10-18 |
$1,986,000 |
| 8039338 |
Method for reducing defects of gate of CMOS devices during cleaning processes by modifying a parasitic PN junction |
Peter Javorka, Karsten Wieczorek, Kerstin Ruttloff |
2011-10-18 |
$1,986,000 |
| 7999326 |
Tensile strain source using silicon/germanium in globally strained silicon |
Andy Wei, Karla Romero |
2011-08-16 |
$3,370,000 |
| 7955937 |
Method for manufacturing semiconductor device comprising SOI transistors and bulk transistors |
Karsten Wieczorek, Thomas Feudel, Thomas J. Heller, Jr. |
2011-06-07 |
$10,131,000 |
| 7906383 |
Stress transfer in an interlayer dielectric by providing a stressed dielectric layer above a stress-neutral dielectric material in a semiconductor device |
Ralf Richter, Andy Wei, Joerg Hohage |
2011-03-15 |
$6,095,000 |
| 7893503 |
Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain |
Sven Beyer, Patrick Press, Wolfgang Buchholtz |
2011-02-22 |
$17,676,000 |
| 7863171 |
SOI transistor having a reduced body potential and a method of forming the same |
Jan Hoentschel, Andy Wei, Joe Bloomquist |
2011-01-04 |
$12,328,000 |
| 7829421 |
SOI transistor having an embedded strain layer and a reduced floating body effect and a method for forming the same |
Andy Wei, Thorsten Kammler, Jan Hoentschel |
2010-11-09 |
$4,649,000 |
| 7816199 |
Method of forming a semiconductor structure comprising an implantation of ions of a non-doping element |
Thomas Feudel, Andreas Gehring |
2010-10-19 |
$4,223,000 |
| 7763515 |
Transistor with embedded silicon/germanium material on a strained semiconductor on insulator substrate |
Andy Wei, Thorsten Kammler, Roman Boschke |
2010-07-27 |
$6,860,000 |
| 7741167 |
Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain |
Sven Beyer, Patrick Press, Wolfgang Buchholtz |
2010-06-22 |
$10,015,000 |
| 7732291 |
Semiconductor device having stressed etch stop layers of different intrinsic stress in combination with PN junctions of different design in different device regions |
Joe Bloomquist, Peter Javorka, Gert Burbach |
2010-06-08 |
$16,231,000 |
| 7727827 |
Method of forming a semiconductor structure |
Frank Wirbeleit, Rolf Stephan |
2010-06-01 |
$11,970,000 |
| 7723195 |
Method of forming a field effect transistor |
Andy Wei, Thorsten Kammler, Jan Hoentschel |
2010-05-25 |
$6,565,000 |
| 7719060 |
Tensile strain source using silicon/germanium in globally strained silicon |
Andy Wei, Karla Romero |
2010-05-18 |
$8,134,000 |
| 7696052 |
Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions |
Andy Wei, Thorsten Kammler, Jan Hoentschel, Peter Javorka, Joe Bloomquist |
2010-04-13 |
$12,774,000 |
| 7659213 |
Transistor having an embedded tensile strain layer with reduced offset to the gate electrode and a method for forming the same |
Andy Wei, Thorsten Kammler, Jan Hoentschel |
2010-02-09 |
$15,199,000 |
