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Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions |
Andy Wei, Thorsten Kammler, Jan Hoentschel, Manfred Horstmann, Peter Javorka |
2012-09-25 |
| 8138571 |
Semiconductor device comprising isolation trenches inducing different types of strain |
Christoph Schwan, Peter Javorka, Manfred Horstmann, Sven Beyer, Markus Forsberg +2 more |
2012-03-20 |
| 7863171 |
SOI transistor having a reduced body potential and a method of forming the same |
Jan Hoentschel, Andy Wei, Manfred Horstmann |
2011-01-04 |
| 7732291 |
Semiconductor device having stressed etch stop layers of different intrinsic stress in combination with PN junctions of different design in different device regions |
Peter Javorka, Manfred Horstmann, Gert Burbach |
2010-06-08 |
| 7696052 |
Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions |
Andy Wei, Thorsten Kammler, Jan Hoentschel, Manfred Horstmann, Peter Javorka |
2010-04-13 |
| 7556996 |
Field effect transistor comprising a stressed channel region and method of forming the same |
Christoph Schwan, Kai Frohberg, Manfred Horstmann |
2009-07-07 |
| 7547610 |
Method of making a semiconductor device comprising isolation trenches inducing different types of strain |
Christoph Schwan, Peter Javorka, Manfred Horstmann, Sven Beyer, Markus Forsberg +2 more |
2009-06-16 |
