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Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials |
Rolf Stephan, Markus Forsberg, Anthony Mowry |
2014-08-05 |
| 7732291 |
Semiconductor device having stressed etch stop layers of different intrinsic stress in combination with PN junctions of different design in different device regions |
Joe Bloomquist, Peter Javorka, Manfred Horstmann |
2010-06-08 |
| 7354839 |
Gate structure and a transistor having asymmetric spacer elements and methods of forming the same |
Andy Wei, David C. Greenlaw |
2008-04-08 |
| 7354836 |
Technique for forming a strained transistor by a late amorphization and disposable spacers |
Jan Hoentschel, Andy Wei, Peter Javorka |
2008-04-08 |
| 7238578 |
Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regions |
Rolf Stephan, Karsten Wieczorek, Manfred Horstmann |
2007-07-03 |
| 7005380 |
Simultaneous formation of device and backside contacts on wafers having a buried insulator layer |
Massud Aminpur, Christian Zistl |
2006-02-28 |
| 6943088 |
Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding |
Ralf van Bentum, Stephan Kruegel |
2005-09-13 |
| 6905924 |
Diode structure for SOI circuits |
Manfred Horstmann, Thomas Feudel |
2005-06-14 |
| 6821840 |
Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit area |
Karsten Wieczorek, Thomas Feudel |
2004-11-23 |
| 6720242 |
Method of forming a substrate contact in a field effect transistor formed over a buried insulator layer |
Frank Heinlein, Johannes Groschopf, Gotthard Jungnickel, Hartmut Ruelke, Carsten Hartig |
2004-04-13 |
| 6656825 |
Semiconductor device having an improved local interconnect structure and a method for forming such a device |
— |
2003-12-02 |
| 6541863 |
Semiconductor device having a reduced signal processing time and a method of fabricating the same |
Manfred Horstmann, Karsten Wieczorek |
2003-04-01 |
| 6271122 |
Method of compensating for material loss in a metal silicone layer in contacts of integrated circuit devices |
Karsten Wieczorek, Michael Raab |
2001-08-07 |
