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USPTO Patent Rankings Data through Dec 31, 2025
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Gert Burbach — 13 Patents

AMD: 12 patents #1,052 of 9,280Top 15%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
Dresden, DE: #159 of 3,254 inventorsTop 5%
Overall (All Time): #362,438 of 4,157,543Top 9%
13 Patents All Time
Gert Burbach has been granted 13 US patents while listed as an inventor at AMD. The first was granted in 2001 and the most recent in August 2014. Gert Burbach ranks #362,438 of 4,157,543 US inventors in our database (top 8.7%). Patent records list Gert Burbach in Dresden, DE.

Issued Patents All Time

Showing 1–13 of 13 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
8796807 Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials Rolf Stephan, Markus Forsberg, Anthony Mowry 2014-08-05 $3,132,000
7732291 Semiconductor device having stressed etch stop layers of different intrinsic stress in combination with PN junctions of different design in different device regions Joe Bloomquist, Peter Javorka, Manfred Horstmann 2010-06-08 $16,231,000
7354839 Gate structure and a transistor having asymmetric spacer elements and methods of forming the same Andy Wei, David C. Greenlaw 2008-04-08 $4,787,000
7354836 Technique for forming a strained transistor by a late amorphization and disposable spacers Jan Hoentschel, Andy Wei, Peter Javorka 2008-04-08 $4,787,000
7238578 Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regions Rolf Stephan, Karsten Wieczorek, Manfred Horstmann 2007-07-03 $26,803,000
7005380 Simultaneous formation of device and backside contacts on wafers having a buried insulator layer Massud Aminpur, Christian Zistl 2006-02-28 $11,043,000
6943088 Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding Ralf van Bentum, Stephan Kruegel 2005-09-13 $9,865,000
6905924 Diode structure for SOI circuits Manfred Horstmann, Thomas Feudel 2005-06-14 $5,811,000
6821840 Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit area Karsten Wieczorek, Thomas Feudel 2004-11-23 $3,336,000
6720242 Method of forming a substrate contact in a field effect transistor formed over a buried insulator layer Frank Heinlein, Johannes Groschopf, Gotthard Jungnickel, Hartmut Ruelke, Carsten Hartig 2004-04-13 $3,617,000
6656825 Semiconductor device having an improved local interconnect structure and a method for forming such a device 2003-12-02 $4,088,000
6541863 Semiconductor device having a reduced signal processing time and a method of fabricating the same Manfred Horstmann, Karsten Wieczorek 2003-04-01 $3,014,000
6271122 Method of compensating for material loss in a metal silicone layer in contacts of integrated circuit devices Karsten Wieczorek, Michael Raab 2001-08-07 $4,984,000