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USPTO Patent Rankings Data through Dec 31, 2025
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Stephan Kruegel — 13 Patents

AMD: 10 patents #1,240 of 9,280Top 15%
Globalfoundries: 3 patents #1,029 of 4,424Top 25%
Fürth, DE: #19 of 310 inventorsTop 7%
Overall (All Time): #362,438 of 4,157,543Top 9%
13 Patents All Time
Stephan Kruegel has been granted 13 US patents while listed as an inventor at AMD. The first was granted in 2003 and the most recent in May 2014. Stephan Kruegel ranks #362,438 of 4,157,543 US inventors in our database (top 8.7%). Patent records list Stephan Kruegel in Fürth, DE.

Patents per Year

Patents granted per year, 2003 to 2014Bar chart with a peak of 4 patents in 2004.peak 42003: 1 patents20032004: 4 patents20042005: 2 patents20052008: 2 patents20082010: 1 patents20102011: 1 patents20112014: 2 patents2014

Issued Patents All Time

Showing 1–13 of 13 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
8735270 Method for making high-K metal gate electrode structures by separate removal of placeholder materials Klaus Hempel, Sven Beyer, Markus Lenski 2014-05-27 $1,638,000
8697530 Drain/source extension structure of a field effect transistor with reduced boron diffusion Ekkehard Pruefer, Ralf van Bentum, Klaus Hempel 2014-04-15 $4,275,000
8048792 Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder material Sven Beyer, Klaus Hempel, Andreas Ott 2011-11-01 $1,838,000
7858526 Method of patterning gate electrodes by reducing sidewall angles of a mask layer Roland Stejskal, Markus Lenski 2010-12-28 $4,143,000
7358150 Trench isolation structure for a semiconductor device with reduced sidewall stress and a method of manufacturing the same Klaus Hempel, Ekkehard Pruefer 2008-04-15 $9,290,000
7332384 Technique for forming a substrate having crystalline semiconductor regions of different characteristics Wolfgang Buchholtz 2008-02-19 $10,551,000
6943088 Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding Ralf van Bentum, Gert Burbach 2005-09-13 $9,865,000
6849516 Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layer Thomas Feudel, Manfred Horstmann, Karsten Wieczorek 2005-02-01 $6,992,000
6821887 Method of forming a metal silicide gate in a standard MOS process sequence Karsten Wieczorek, Manfred Horstmann, Thomas Feudel 2004-11-23 $3,336,000
6812115 Method of filling an opening in a material layer with an insulating material Karsten Wieczorek, Michael Raab 2004-11-02 $2,431,000
6798028 Field effect transistor with reduced gate delay and method of fabricating the same Manfred Horstmann, Rolf Stephan, Karsten Wieczorek 2004-09-28 $1,915,000
6703278 Method of forming layers of oxide on a surface of a substrate Karsten Wieczorek, Falk Graetsch 2004-03-09 $3,777,000
6566718 Field effect transistor with an improved gate contact and method of fabricating the same Karsten Wieczorek, Rolf Stephan, Manfred Horstmann 2003-05-20 $2,116,000