| 8735270 |
Method for making high-K metal gate electrode structures by separate removal of placeholder materials |
Klaus Hempel, Sven Beyer, Markus Lenski |
2014-05-27 |
| 8697530 |
Drain/source extension structure of a field effect transistor with reduced boron diffusion |
Ekkehard Pruefer, Ralf van Bentum, Klaus Hempel |
2014-04-15 |
| 8048792 |
Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder material |
Sven Beyer, Klaus Hempel, Andreas Ott |
2011-11-01 |
| 7858526 |
Method of patterning gate electrodes by reducing sidewall angles of a mask layer |
Roland Stejskal, Markus Lenski |
2010-12-28 |
| 7358150 |
Trench isolation structure for a semiconductor device with reduced sidewall stress and a method of manufacturing the same |
Klaus Hempel, Ekkehard Pruefer |
2008-04-15 |
| 7332384 |
Technique for forming a substrate having crystalline semiconductor regions of different characteristics |
Wolfgang Buchholtz |
2008-02-19 |
| 6943088 |
Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding |
Ralf van Bentum, Gert Burbach |
2005-09-13 |
| 6849516 |
Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layer |
Thomas Feudel, Manfred Horstmann, Karsten Wieczorek |
2005-02-01 |
| 6821887 |
Method of forming a metal silicide gate in a standard MOS process sequence |
Karsten Wieczorek, Manfred Horstmann, Thomas Feudel |
2004-11-23 |
| 6812115 |
Method of filling an opening in a material layer with an insulating material |
Karsten Wieczorek, Michael Raab |
2004-11-02 |
| 6798028 |
Field effect transistor with reduced gate delay and method of fabricating the same |
Manfred Horstmann, Rolf Stephan, Karsten Wieczorek |
2004-09-28 |
| 6703278 |
Method of forming layers of oxide on a surface of a substrate |
Karsten Wieczorek, Falk Graetsch |
2004-03-09 |
| 6566718 |
Field effect transistor with an improved gate contact and method of fabricating the same |
Karsten Wieczorek, Rolf Stephan, Manfred Horstmann |
2003-05-20 |
