| 8951901 |
Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistry |
Sven Beyer, Berthold Reimer |
2015-02-10 |
| 8445344 |
Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning |
Richard J. Carter, Martin Trentzsch, Sven Beyer, Berthold Reimer, Robert Binder +1 more |
2013-05-21 |
| 8283232 |
Enhanced etch stop capability during patterning of silicon nitride including layer stacks by providing a chemically formed oxide layer during semiconductor processing |
Sven Beyer, Berthold Reimer |
2012-10-09 |
| 7897450 |
Method for encapsulating a high-K gate stack by forming a liner at two different process temperatures |
Fabian Koehler, Katy Schabernack |
2011-03-01 |
| 6900111 |
Method of forming a thin oxide layer having improved reliability on a semiconductor surface |
Karsten Wieczorek, Stephan Krügel |
2005-05-31 |
| 6875676 |
Methods for producing a highly doped electrode for a field effect transistor |
Karsten Wieczorek, Gunter Grasshoff |
2005-04-05 |
| 6812159 |
Method of forming a low leakage dielectric layer providing an increased capacitive coupling |
Karsten Wieczorek, Lutz Herrmann |
2004-11-02 |
| 6723663 |
Technique for forming an oxide/nitride layer stack by controlling the nitrogen ion concentration in a nitridation plasma |
Karsten Wieczorek, Lutz Herrmann |
2004-04-20 |
| 6703278 |
Method of forming layers of oxide on a surface of a substrate |
Karsten Wieczorek, Stephan Kruegel |
2004-03-09 |
