Falk Graetsch — 9 Patents at AMD

Falk Graetsch has been granted 9 US patents while listed as an inventor at AMD. The first was granted in 2004 and the most recent in February 2015. Falk Graetsch ranks #535,341 of 4,157,543 US inventors in our database (top 12.9%). Patent records list Falk Graetsch in Dresden, DE.

Issued Patents All Time

Showing 1–9 of 9 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
8951901	Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistry	Sven Beyer, Berthold Reimer	2015-02-10	$2,183,000
8445344	Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning	Richard J. Carter, Martin Trentzsch, Sven Beyer, Berthold Reimer, Robert Binder +1 more	2013-05-21	$4,418,000
8283232	Enhanced etch stop capability during patterning of silicon nitride including layer stacks by providing a chemically formed oxide layer during semiconductor processing	Sven Beyer, Berthold Reimer	2012-10-09	$2,773,000
7897450	Method for encapsulating a high-K gate stack by forming a liner at two different process temperatures	Fabian Koehler, Katy Schabernack	2011-03-01	$8,863,000
6900111	Method of forming a thin oxide layer having improved reliability on a semiconductor surface	Karsten Wieczorek, Stephan Krügel	2005-05-31	$6,268,000
6875676	Methods for producing a highly doped electrode for a field effect transistor	Karsten Wieczorek, Gunter Grasshoff	2005-04-05	$7,987,000
6812159	Method of forming a low leakage dielectric layer providing an increased capacitive coupling	Karsten Wieczorek, Lutz Herrmann	2004-11-02	$2,431,000
6723663	Technique for forming an oxide/nitride layer stack by controlling the nitrogen ion concentration in a nitridation plasma	Karsten Wieczorek, Lutz Herrmann	2004-04-20	$2,632,000
6703278	Method of forming layers of oxide on a surface of a substrate	Karsten Wieczorek, Stephan Kruegel	2004-03-09	$3,777,000

Falk Graetsch — 9 Patents

Issued Patents All Time

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