Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10163933 | Ferro-FET device with buried buffer/ferroelectric layer stack | Ralf Richter, Stefan Dünkel, Sven Beyer | 2018-12-25 |
| 10084057 | NVM device in SOI technology and method of fabricating an according device | Sven Beyer, Stefan Flachowsky, Axel Henke | 2018-09-25 |
| 9508588 | Methods for fabricating integrated circuits with isolation regions having uniform step heights | Carsten Grass, Sören Jansen | 2016-11-29 |
| 9236482 | Semiconductor device with field-inducing structure | Matthias Goldbach | 2016-01-12 |
| 9064900 | FinFET method comprising high-K dielectric | Matthias Goldbach | 2015-06-23 |
| 8993459 | Method of forming a material layer in a semiconductor structure | Carsten Grass, Boris Bayha, Peter Krottenthaler | 2015-03-31 |
| 8872285 | Metal gate structure for semiconductor devices | Thilo Scheiper, Carsten Grass, Richard J. Carter | 2014-10-28 |
| 8823138 | Semiconductor resistor including a dielectric layer including a species creating fixed charges and method for the formation thereof | Matthias Goldbach | 2014-09-02 |
| 8735240 | CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal | Torben Kelwing, Boris Bayha, Carsten Grass, Richard J. Carter | 2014-05-27 |
| 8735253 | Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation process | Stephan Kronholz, Vassilios Papageorgiou | 2014-05-27 |
| 8658490 | Passivating point defects in high-K gate dielectric layers during gate stack formation | Elke Erben, Richard J. Carter | 2014-02-25 |
| 8609482 | Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process | Stephan Kronholz, Carsten Reichel, Annekathrin Zeun | 2013-12-17 |
| 8525289 | Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization | Richard J. Carter, Sven Beyer, Rohit Pal | 2013-09-03 |
| 8486786 | Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process | Stephan Kronholz, Richard J. Carter | 2013-07-16 |
| 8445344 | Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning | Richard J. Carter, Falk Graetsch, Sven Beyer, Berthold Reimer, Robert Binder +1 more | 2013-05-21 |
| 8378432 | Maintaining integrity of a high-K gate stack by an offset spacer used to determine an offset of a strain-inducing semiconductor alloy | Richard J. Carter, Sven Beyer | 2013-02-19 |
| 8349695 | Work function adjustment in high-k gate stacks including gate dielectrics of different thickness | Thilo Scheiper, Andy Wei | 2013-01-08 |
| 8293610 | Semiconductor device comprising a metal gate stack of reduced height and method of forming the same | Sven Beyer, Rolf Stephan, Patrick Press | 2012-10-23 |
| 8247282 | Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process | Stephan Kronholz, Carsten Reichel, Annekathrin Zeun | 2012-08-21 |
| 8198192 | Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization | Richard J. Carter, Sven Beyer, Rohit Pal | 2012-06-12 |
| 8158065 | In situ monitoring of metal contamination during microstructure processing | Stephan Kronholz, Rolf Stephan | 2012-04-17 |
| 8119461 | Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment | Thorsten Kammler, Rolf Stephan | 2012-02-21 |
| 8101512 | Method of enhancing lithography capabilities during gate formation in semiconductors having a pronounced surface topography | Martin Gerhardt, Markus Forsberg, Manfred Horstmann | 2012-01-24 |
| 8021942 | Method of forming CMOS device having gate insulation layers of different type and thickness | Andy Wei, Andrew Waite, Johannes Groschopf, Gunter Grasshoff, Andreas Ott | 2011-09-20 |
| 7994037 | Gate dielectrics of different thickness in PMOS and NMOS transistors | Karsten Wieczorek, Edward E. Ehrichs | 2011-08-09 |