Issued Patents All Time
Showing 25 most recent of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8188871 | Drive current adjustment for transistors by local gate engineering | Manfred Horstmann, Patrick Press, Kerstin Ruttloff | 2012-05-29 |
| 8097542 | Etch stop layer of reduced thickness for patterning a dielectric material in a contact level of closely spaced transistors | Manfred Horstmann, Peter Huebler, Kerstin Ruttloff | 2012-01-17 |
| 8039338 | Method for reducing defects of gate of CMOS devices during cleaning processes by modifying a parasitic PN junction | Manfred Horstmann, Peter Javorka, Kerstin Ruttloff | 2011-10-18 |
| 7994037 | Gate dielectrics of different thickness in PMOS and NMOS transistors | Martin Trentzsch, Edward E. Ehrichs | 2011-08-09 |
| 7955937 | Method for manufacturing semiconductor device comprising SOI transistors and bulk transistors | Manfred Horstmann, Thomas Feudel, Thomas J. Heller, Jr. | 2011-06-07 |
| 7745334 | Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques | Patrick Press, Karla Romero, Martin Trentzsch, Thomas Feudel, Markus Lenski +1 more | 2010-06-29 |
| 7494872 | Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor | Thomas Feudel, Thorsten Kammler, Wolfgang Buchholtz | 2009-02-24 |
| 7419867 | CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structure | Manfred Horstmann, Thomas Feudel | 2008-09-02 |
| 7297994 | Semiconductor device having a retrograde dopant profile in a channel region | Manfred Horstmann, Rolf Stephan | 2007-11-20 |
| 7238578 | Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regions | Gert Burbach, Rolf Stephan, Manfred Horstmann | 2007-07-03 |
| 7226859 | Method of forming different silicide portions on different silicon-containing regions in a semiconductor device | Manfred Horstmann, Rolf Stephan | 2007-06-05 |
| 7217657 | Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device | Manfred Horstmann, Rolf Stephan | 2007-05-15 |
| 7192881 | Method of forming sidewall spacer elements for a circuit element by increasing an etch selectivity | Thorsten Kammler, Christoph Schwan | 2007-03-20 |
| 7148145 | Semiconductor device having T-shaped gate structure comprising in situ sidewall spacers and method of forming the semiconductor device | Manfred Horstmann, Rolf Stephan | 2006-12-12 |
| 7122410 | Polysilicon line having a metal silicide region enabling linewidth scaling including forming a second metal silicide region on the substrate | Thorsten Kammler, Matthias Schaller | 2006-10-17 |
| 7115464 | Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device | Rolf Stephan, Manfred Horstmann | 2006-10-03 |
| 7067410 | Method of forming a metal silicide | Thorsten Kammler, Manfred Horstmann | 2006-06-27 |
| 7060549 | SRAM devices utilizing tensile-stressed strain films and methods for fabricating the same | Mark Craig, Manfred Horstmann | 2006-06-13 |
| 7041583 | Method of removing features using an improved removal process in the fabrication of a semiconductor device | Manfred Horstmann, Rolf Stephan | 2006-05-09 |
| 6995027 | Integrated semiconductor structure for reliability tests of dielectrics | Rolf Geilenkeuser, Jörg Weidner | 2006-02-07 |
| 6933620 | Semiconductor component and method of manufacture | Scott Lunning, Thorsten Kammler | 2005-08-23 |
| 6911404 | Transistor element having an anisotropic high-k gate dielectric | Christian Radehaus | 2005-06-28 |
| 6900111 | Method of forming a thin oxide layer having improved reliability on a semiconductor surface | Stephan Krügel, Falk Graetsch | 2005-05-31 |
| 6881641 | Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same | Manfred Horstmann, Rolf Stephan | 2005-04-19 |
| 6875676 | Methods for producing a highly doped electrode for a field effect transistor | Falk Graetsch, Gunter Grasshoff | 2005-04-05 |