| 8806824 |
Wall construction and component for the same |
— |
2014-08-19 |
|
| 8617940 |
SOI device with a buried insulating material having increased etch resistivity |
Andreas Kurz, Roman Boschke, John Morgan |
2013-12-31 |
$2,797,000 |
| 8609485 |
Methods of forming efuse devices |
Andreas Kurz, Andy Wei |
2013-12-17 |
$1,491,000 |
| 8564089 |
Electronic fuse structure formed using a metal gate electrode material stack configuration |
Andreas Kurz, Jan Hoentschel |
2013-10-22 |
$1,818,000 |
| 8193066 |
Semiconductor device comprising a silicon/germanium resistor |
Andreas Kurz, Roman Boschke, John Morgan |
2012-06-05 |
$2,975,000 |
| 8138571 |
Semiconductor device comprising isolation trenches inducing different types of strain |
Joe Bloomquist, Peter Javorka, Manfred Horstmann, Sven Beyer, Markus Forsberg +2 more |
2012-03-20 |
$9,207,000 |
| 8110487 |
Method of creating a strained channel region in a transistor by deep implantation of strain-inducing species below the channel region |
Uwe Griebenow, Kai Frohberg, Kerstin Ruttloff |
2012-02-07 |
$12,466,000 |
| 7838354 |
Method for patterning contact etch stop layers by using a planarization process |
Kai Frohberg, Sven Mueller |
2010-11-23 |
$5,148,000 |
| 7838359 |
Technique for forming contact insulation layers and silicide regions with different characteristics |
Kai Frohberg, Matthias Lehr |
2010-11-23 |
$5,148,000 |
| 7713815 |
Semiconductor device including a vertical decoupling capacitor |
Matthias Lehr, Kai Frohberg |
2010-05-11 |
$11,612,000 |
| 7659170 |
Method of increasing transistor drive current by recessing an isolation trench |
Manfred Horstmann, Martin Gerhardt, Markus Forseberg |
2010-02-09 |
$15,199,000 |
| 7563731 |
Field effect transistor having a stressed dielectric layer based on an enhanced device topography |
Manfred Horstmann, Kai Frohberg, Rolf Stephan |
2009-07-21 |
$9,005,000 |
| 7556996 |
Field effect transistor comprising a stressed channel region and method of forming the same |
Joe Bloomquist, Kai Frohberg, Manfred Horstmann |
2009-07-07 |
$14,531,000 |
| 7547610 |
Method of making a semiconductor device comprising isolation trenches inducing different types of strain |
Joe Bloomquist, Peter Javorka, Manfred Horstmann, Sven Beyer, Markus Forsberg +2 more |
2009-06-16 |
$16,459,000 |
| 7338872 |
Method of depositing a layer of a material on a substrate |
Thomas Feudel, Thorsten Kammler |
2008-03-04 |
$9,869,000 |
| 7192881 |
Method of forming sidewall spacer elements for a circuit element by increasing an etch selectivity |
Thorsten Kammler, Karsten Wieczorek |
2007-03-20 |
$9,786,000 |
| 7098140 |
Method of compensating for etch rate non-uniformities by ion implantation |
Matthias Schaller, Carsten Hartig |
2006-08-29 |
$13,087,000 |
| 7064071 |
Method of forming a conformal spacer adjacent to a gate electrode structure |
— |
2006-06-20 |
$7,818,000 |
| 7005358 |
Technique for forming recessed sidewall spacers for a polysilicon line |
Thorsten Kammler, Katja Huy |
2006-02-28 |
$11,043,000 |
| 7005305 |
Signal layer for generating characteristic optical plasma emissions |
Gunter Grasshoff, Matthias Schaller |
2006-02-28 |
$11,043,000 |
| 6969676 |
Method of adjusting etch selectivity by adapting aspect ratios in a multi-level etch process |
Gunter Grasshoff, Volker Grimm |
2005-11-29 |
$10,680,000 |
| 6696334 |
Method for formation of a differential offset spacer |
Kay Hellig, Srikanteswara Dakshina-Murthy |
2004-02-24 |
$4,069,000 |
| 6579801 |
Method for enhancing shallow trench top corner rounding using endpoint control of nitride layer etch process with appropriate etch front |
Srikanteswara Dakshina-Murthy, Jeffrey C. Haines |
2003-06-17 |
$2,827,000 |
