Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of increasing transistor drive current by recessing an isolation trench

Method of increasing transistor drive current by recessing an isolation trench

US Patent 7659170 · Granted Feb 9, 2010

Estimated economic value: $15,199,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Variable-speed drive for single-phase asynchronous motors2025
Circuit arrangement for controlling a plurality of electrical loads2024
Transistor element with reduced lateral electrical field2020
Semiconductor structure including a plurality of pairs of nonvolatile memory cel2020
Heat dissipative element for polysilicon resistor bank2019
Semiconductor structure including a plurality of pairs of nonvolatile memory cel2018
OPC enlarged dummy electrode to eliminate ski slope at eSiGe2016
Transistor devices with high-k insulation layers2016
Technique for manufacturing semiconductor devices comprising transistors with di2015
Methods of forming transistor devices with high-k insulation layers and the resu2015
Method for forming a strained transistor by stress memorization based on a stres2015
Wall construction and component for the same2014