Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor element with reduced lateral electrical field

Transistor element with reduced lateral electrical field

US Patent 10580863 · Granted Mar 3, 2020

Estimated economic value: $32,225,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transferring information across a high voltage gap using capacitive coupling wit2025
Circuit arrangement for controlling a plurality of electrical loads2024
High-voltage devices integrated on semiconductor-on-insulator substrate2024
Asymmetric FET for FDSOI devices2024
Asymmetric FET for FDSOI devices2024
Structure including transistor using buried insulator layer as gate dielectric a2023
Structure including transistor using buried insulator layer as gate dielectric a2023
Transferring information across a high voltage gap using capacitive coupling wit2023
Floating-gate devices in high voltage applications2023
Floating-gate devices in high voltage applications2023
High-voltage devices integrated on semiconductor-on-insulator substrate2023
Transistor device with a plurality of active gates that can be individually modu2022