Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11929433 | Asymmetric FET for FDSOI devices | Ignasi Cortes, Alban Zaka, El Mehdi Bazizi, Richard F. Taylor, III | 2024-03-12 |
| 11837605 | Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain | Zhixing Zhao, Alban Zaka, Yiching Chen | 2023-12-05 |
| 11610999 | Floating-gate devices in high voltage applications | Alban Zaka, Frank Schlaphof, Nan Wu | 2023-03-21 |
| 11315949 | Charge-trapping sidewall spacer-type non-volatile memory device and method | Steven R. Soss, Leitao Liu, Alban Zaka | 2022-04-26 |
| 11245032 | Asymmetric FET for FDSOI devices | Ignasi Cortes, Alban Zaka, El Mehdi Bazizi, Richard F. Taylor, III | 2022-02-08 |
| 10930777 | Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage | Ignasi Cortes Mayol, Alban Zaka, El Mehdi Bazizi | 2021-02-23 |
| 10644152 | Buried-channel low noise transistors and methods of making such devices | Alban Zaka, Luca Pirro, El Mehdi Bazizi, Jan Hoentschel | 2020-05-05 |
| 10580863 | Transistor element with reduced lateral electrical field | Damien Angot, Alban Zaka, Venkata Naga Ranjith Kuma Nelluri, Jan Hoentschel, Lars Mueller-Meskamp +1 more | 2020-03-03 |
| 10497803 | Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications | Ignasi Cortes Mayol, Christian Schippel, Alban Zaka, El Mehdi Bazizi | 2019-12-03 |
| 10283642 | Thin body field effect transistor including a counter-doped channel area and a method of forming the same | Alban Zaka, Ignasi Cortes Mayol, El Mehdi Bazizi, Luca Pirro | 2019-05-07 |
| 10283584 | Capacitive structure in a semiconductor device having reduced capacitance variability | Alban Zaka, Ignasi Cortes Mayol, Andrei Sidelnicov, El Mehdi Bazizi | 2019-05-07 |
| 10121846 | Resistor structure with high resistance based on very thin semiconductor layer | Alban Zaka, Ignasi Cortes Mayol, El Mehdi Bazizi, John Morgan | 2018-11-06 |
| 9711513 | Semiconductor structure including a nonvolatile memory cell and method for the formation thereof | Alban Zaka, Sven Beyer, El Mehdi Bazizi | 2017-07-18 |
| 9583640 | Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure | Ralf Richter, Sven Beyer, Carsten Grass | 2017-02-28 |
| 8941187 | Strain engineering in three-dimensional transistors based on strained isolation material | Tim Baldauf, Andy Wei, Stefan Flachowsky, Ralf Illgen | 2015-01-27 |
| 8916928 | Threshold voltage adjustment in a fin transistor by corner implantation | Tim Baldauf, Andy Wei, Stefan Flachowsky, Ralf Illgen | 2014-12-23 |
| 8912606 | Integrated circuits having protruding source and drain regions and methods for forming integrated circuits | Tim Baldauf, Stefan Flachowsky, Ralf Illgen | 2014-12-16 |
| 8859408 | Stabilized metal silicides in silicon-germanium regions of transistor elements | Stefan Flachowsky, Clemens Fitz | 2014-10-14 |
| 8580643 | Threshold voltage adjustment in a Fin transistor by corner implantation | Tim Baldauf, Andy Wei, Stefan Flachowsky, Ralf Illgen | 2013-11-12 |