| 11929433 |
Asymmetric FET for FDSOI devices |
Ignasi Cortes, Alban Zaka, El Mehdi Bazizi, Richard F. Taylor, III |
2024-03-12 |
$70,746,000 |
| 11837605 |
Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain |
Zhixing Zhao, Alban Zaka, Yiching Chen |
2023-12-05 |
$36,997,000 |
| 11610999 |
Floating-gate devices in high voltage applications |
Alban Zaka, Frank Schlaphof, Nan Wu |
2023-03-21 |
|
| 11315949 |
Charge-trapping sidewall spacer-type non-volatile memory device and method |
Steven R. Soss, Leitao Liu, Alban Zaka |
2022-04-26 |
|
| 11245032 |
Asymmetric FET for FDSOI devices |
Ignasi Cortes, Alban Zaka, El Mehdi Bazizi, Richard F. Taylor, III |
2022-02-08 |
$195,929,000 |
| 10930777 |
Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage |
Ignasi Cortes Mayol, Alban Zaka, El Mehdi Bazizi |
2021-02-23 |
|
| 10644152 |
Buried-channel low noise transistors and methods of making such devices |
Alban Zaka, Luca Pirro, El Mehdi Bazizi, Jan Hoentschel |
2020-05-05 |
$25,055,000 |
| 10580863 |
Transistor element with reduced lateral electrical field |
Damien Angot, Alban Zaka, Venkata Naga Ranjith Kuma Nelluri, Jan Hoentschel, Lars Mueller-Meskamp +1 more |
2020-03-03 |
$32,225,000 |
| 10497803 |
Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications |
Ignasi Cortes Mayol, Christian Schippel, Alban Zaka, El Mehdi Bazizi |
2019-12-03 |
$65,885,000 |
| 10283642 |
Thin body field effect transistor including a counter-doped channel area and a method of forming the same |
Alban Zaka, Ignasi Cortes Mayol, El Mehdi Bazizi, Luca Pirro |
2019-05-07 |
$22,156,000 |
| 10283584 |
Capacitive structure in a semiconductor device having reduced capacitance variability |
Alban Zaka, Ignasi Cortes Mayol, Andrei Sidelnicov, El Mehdi Bazizi |
2019-05-07 |
$22,156,000 |
| 10121846 |
Resistor structure with high resistance based on very thin semiconductor layer |
Alban Zaka, Ignasi Cortes Mayol, El Mehdi Bazizi, John Morgan |
2018-11-06 |
$15,674,000 |
| 9711513 |
Semiconductor structure including a nonvolatile memory cell and method for the formation thereof |
Alban Zaka, Sven Beyer, El Mehdi Bazizi |
2017-07-18 |
$11,753,000 |
| 9583640 |
Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure |
Ralf Richter, Sven Beyer, Carsten Grass |
2017-02-28 |
$11,370,000 |
| 8941187 |
Strain engineering in three-dimensional transistors based on strained isolation material |
Tim Baldauf, Andy Wei, Stefan Flachowsky, Ralf Illgen |
2015-01-27 |
$1,455,000 |
| 8916928 |
Threshold voltage adjustment in a fin transistor by corner implantation |
Tim Baldauf, Andy Wei, Stefan Flachowsky, Ralf Illgen |
2014-12-23 |
$2,667,000 |
| 8912606 |
Integrated circuits having protruding source and drain regions and methods for forming integrated circuits |
Tim Baldauf, Stefan Flachowsky, Ralf Illgen |
2014-12-16 |
$1,928,000 |
| 8859408 |
Stabilized metal silicides in silicon-germanium regions of transistor elements |
Stefan Flachowsky, Clemens Fitz |
2014-10-14 |
$1,406,000 |
| 8580643 |
Threshold voltage adjustment in a Fin transistor by corner implantation |
Tim Baldauf, Andy Wei, Stefan Flachowsky, Ralf Illgen |
2013-11-12 |
$1,972,000 |
