IM

Ignasi Cortes Mayol

GU Globalfoundries U.S.: 1 patents #344 of 665Top 55%
📍 Dresden, DE: #1,093 of 3,254 inventorsTop 35%
Overall (All Time): #1,870,011 of 4,157,543Top 45%
2
Patents All Time

Issued Patents All Time

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
10930777 Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage Alban Zaka, Tom Herrmann, El Mehdi Bazizi 2021-02-23
10497803 Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications Christian Schippel, Alban Zaka, Tom Herrmann, El Mehdi Bazizi 2019-12-03