RI

Ralf Illgen

Globalfoundries: 22 patents #130 of 4,424Top 3%
AM AMD: 2 patents #3,994 of 9,279Top 45%
Overall (All Time): #173,274 of 4,157,543Top 5%
24
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
10176859 Non-volatile transistor element including a buried ferroelectric material based storage mechanism Stefan Duenkel, Ralf Richter, Soeren Jansen 2019-01-08
10056376 Ferroelectric FinFET Stefan Flachowsky, Jan Hoentschel 2018-08-21
9966466 Semiconductor-on-insulator wafer, semiconductor structure including a transistor, and methods for the formation and operation thereof Stefan Flachowsky 2018-05-08
9899417 Semiconductor structure including a first transistor and a second transistor Stefan Flachowsky 2018-02-20
9685457 Method including a formation of a transistor and semiconductor structure including a first transistor and a second transistor Stefan Flachowsky 2017-06-20
9583240 Temperature independent resistor Stefan Flachowsky, Jan Hoentschel 2017-02-28
9449972 Ferroelectric FinFET Stefan Flachowsky, Jan Hoentschel 2016-09-20
9269714 Device including a transistor having a stressed channel region and method for the formation thereof Stefan Flachowsky, Gerd Zschaezsch 2016-02-23
9224840 Replacement gate FinFET structures with high mobility channel Stefan Flachowsky, Jan Hoentschel 2015-12-29
9023713 Ultrathin body fully depleted silicon-on-insulator integrated circuits and methods for fabricating same Stefan Flachowsky 2015-05-05
9012277 In situ doping and diffusionless annealing of embedded stressor regions in PMOS and NMOS devices Stefan Flachowsky 2015-04-21
8941187 Strain engineering in three-dimensional transistors based on strained isolation material Tim Baldauf, Andy Wei, Tom Herrmann, Stefan Flachowsky 2015-01-27
8916928 Threshold voltage adjustment in a fin transistor by corner implantation Tim Baldauf, Andy Wei, Tom Herrmann, Stefan Flachowsky 2014-12-23
8912606 Integrated circuits having protruding source and drain regions and methods for forming integrated circuits Tim Baldauf, Tom Herrmann, Stefan Flachowsky 2014-12-16
8835255 Method of forming a semiconductor structure including a vertical nanowire Tim Baldauf, Stefan Flachowsky, Tom HERMANN 2014-09-16
8835936 Source and drain doping using doped raised source and drain regions Jan Hoentschel, Stefan Flachowsky 2014-09-16
8753969 Methods for fabricating MOS devices with stress memorization Stefan Flachowsky 2014-06-17
8647951 Implantation of hydrogen to improve gate insulation layer-substrate interface Stefan Flachowsky, Jan Hoentschel 2014-02-11
8580643 Threshold voltage adjustment in a Fin transistor by corner implantation Tim Baldauf, Andy Wei, Tom Herrmann, Stefan Flachowsky 2013-11-12
8536034 Methods of forming stressed silicon-carbon areas in an NMOS transistor Stefan Flachowsky, Thilo Scheiper, Jan Hoentschel 2013-09-17
8476131 Methods of forming a semiconductor device with recessed source/design regions, and a semiconductor device comprising same Stefan Flachowsky, Thilo Scheiper, Ricardo P. Mikalo 2013-07-02
8466018 Methods of forming a PMOS device with in situ doped epitaxial source/drain regions Stefan Flachowsky, Ina Ostermay 2013-06-18
8338885 Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes Jan Hoentschel, Thomas Feudel 2012-12-25
8143133 Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes Jan Hoentschel, Thomas Feudel 2012-03-27