| 8623742 |
Reduced STI loss for superior surface planarity of embedded stressors in densely packed semiconductor devices |
Stephan Kronholz, Matthias Kessler |
2014-01-07 |
$3,415,000 |
| 8586440 |
Methods for fabricating integrated circuits using non-oxidizing resist removal |
Stefan Flachowsky, Steven Langdon |
2013-11-19 |
$2,505,000 |
| 8541885 |
Technique for enhancing transistor performance by transistor specific contact design |
Martin Gerhardt, Ralf Richter, Uwe Griebenow |
2013-09-24 |
$4,620,000 |
| 8338885 |
Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes |
Jan Hoentschel, Ralf Illgen |
2012-12-25 |
|
| 8288256 |
Enhancing transistor characteristics by a late deep implantation in combination with a diffusion-free anneal process |
Rolf Stephan, Manfred Horstmann |
2012-10-16 |
$3,691,000 |
| 8183605 |
Reducing transistor junction capacitance by recessing drain and source regions |
Markus Lenski, Andreas Gehring |
2012-05-22 |
$2,529,000 |
| 8143133 |
Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes |
Jan Hoentschel, Ralf Illgen |
2012-03-27 |
$11,097,000 |
| 7964970 |
Technique for enhancing transistor performance by transistor specific contact design |
Martin Gerhardt, Ralf Richter, Uwe Griebenow |
2011-06-21 |
$7,582,000 |
| 7955937 |
Method for manufacturing semiconductor device comprising SOI transistors and bulk transistors |
Karsten Wieczorek, Manfred Horstmann, Thomas J. Heller, Jr. |
2011-06-07 |
$10,131,000 |
| 7816199 |
Method of forming a semiconductor structure comprising an implantation of ions of a non-doping element |
Manfred Horstmann, Andreas Gehring |
2010-10-19 |
$4,223,000 |
| 7799682 |
Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor |
Sven Beyer, Patrick Press |
2010-09-21 |
$7,003,000 |
| 7754556 |
Reducing transistor junction capacitance by recessing drain and source regions |
Markus Lenski, Andreas Gehring |
2010-07-13 |
$9,965,000 |
| 7745334 |
Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques |
Patrick Press, Karla Romero, Martin Trentzsch, Karsten Wieczorek, Markus Lenski +1 more |
2010-06-29 |
$10,708,000 |
| 7625802 |
Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor device |
Manfred Horstmann, Rolf Stephan |
2009-12-01 |
$20,921,000 |
| 7494872 |
Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor |
Karsten Wieczorek, Thorsten Kammler, Wolfgang Buchholtz |
2009-02-24 |
$4,276,000 |
| 7419867 |
CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structure |
Karsten Wieczorek, Manfred Horstmann |
2008-09-02 |
$10,882,000 |
| 7338872 |
Method of depositing a layer of a material on a substrate |
Christoph Schwan, Thorsten Kammler |
2008-03-04 |
$9,869,000 |
| 7208397 |
Transistor having an asymmetric source/drain and halo implantation region and a method of forming the same |
Manfred Horstmann, Markus Lenski |
2007-04-24 |
$10,633,000 |
| 6924216 |
Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device |
Manfred Horstmann, Rolf Stephan |
2005-08-02 |
$7,108,000 |
| 6905924 |
Diode structure for SOI circuits |
Gert Burbach, Manfred Horstmann |
2005-06-14 |
$5,811,000 |
| 6897114 |
Methods of forming a transistor having a recessed gate electrode structure |
Christian Krueger, Volker Grimm |
2005-05-24 |
$6,015,000 |
| 6849516 |
Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layer |
Manfred Horstmann, Karsten Wieczorek, Stephan Kruegel |
2005-02-01 |
$6,992,000 |
| 6846708 |
Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device |
Manfred Horstmann, Rolf Stephan |
2005-01-25 |
$16,896,000 |
| 6821887 |
Method of forming a metal silicide gate in a standard MOS process sequence |
Karsten Wieczorek, Stephan Kruegel, Manfred Horstmann |
2004-11-23 |
$3,336,000 |
| 6822430 |
Method of assessing lateral dopant and/or charge carrier profiles |
Manfred Horstmann, Rolf Stephan |
2004-11-23 |
$3,336,000 |
