TF

Thomas Feudel

AM AMD: 25 patents #398 of 9,279Top 5%
Globalfoundries: 5 patents #673 of 4,424Top 20%
Overall (All Time): #125,505 of 4,157,543Top 4%
30
Patents All Time

Issued Patents All Time

Showing 25 most recent of 30 patents

Patent #TitleCo-InventorsDate
8623742 Reduced STI loss for superior surface planarity of embedded stressors in densely packed semiconductor devices Stephan Kronholz, Matthias Kessler 2014-01-07
8586440 Methods for fabricating integrated circuits using non-oxidizing resist removal Stefan Flachowsky, Steven Langdon 2013-11-19
8541885 Technique for enhancing transistor performance by transistor specific contact design Martin Gerhardt, Ralf Richter, Uwe Griebenow 2013-09-24
8338885 Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes Jan Hoentschel, Ralf Illgen 2012-12-25
8288256 Enhancing transistor characteristics by a late deep implantation in combination with a diffusion-free anneal process Rolf Stephan, Manfred Horstmann 2012-10-16
8183605 Reducing transistor junction capacitance by recessing drain and source regions Markus Lenski, Andreas Gehring 2012-05-22
8143133 Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes Jan Hoentschel, Ralf Illgen 2012-03-27
7964970 Technique for enhancing transistor performance by transistor specific contact design Martin Gerhardt, Ralf Richter, Uwe Griebenow 2011-06-21
7955937 Method for manufacturing semiconductor device comprising SOI transistors and bulk transistors Karsten Wieczorek, Manfred Horstmann, Thomas J. Heller, Jr. 2011-06-07
7816199 Method of forming a semiconductor structure comprising an implantation of ions of a non-doping element Manfred Horstmann, Andreas Gehring 2010-10-19
7799682 Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor Sven Beyer, Patrick Press 2010-09-21
7754556 Reducing transistor junction capacitance by recessing drain and source regions Markus Lenski, Andreas Gehring 2010-07-13
7745334 Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques Patrick Press, Karla Romero, Martin Trentzsch, Karsten Wieczorek, Markus Lenski +1 more 2010-06-29
7625802 Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor device Manfred Horstmann, Rolf Stephan 2009-12-01
7494872 Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor Karsten Wieczorek, Thorsten Kammler, Wolfgang Buchholtz 2009-02-24
7419867 CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structure Karsten Wieczorek, Manfred Horstmann 2008-09-02
7338872 Method of depositing a layer of a material on a substrate Christoph Schwan, Thorsten Kammler 2008-03-04
7208397 Transistor having an asymmetric source/drain and halo implantation region and a method of forming the same Manfred Horstmann, Markus Lenski 2007-04-24
6924216 Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device Manfred Horstmann, Rolf Stephan 2005-08-02
6905924 Diode structure for SOI circuits Gert Burbach, Manfred Horstmann 2005-06-14
6897114 Methods of forming a transistor having a recessed gate electrode structure Christian Krueger, Volker Grimm 2005-05-24
6849516 Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layer Manfred Horstmann, Karsten Wieczorek, Stephan Kruegel 2005-02-01
6846708 Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device Manfred Horstmann, Rolf Stephan 2005-01-25
6821887 Method of forming a metal silicide gate in a standard MOS process sequence Karsten Wieczorek, Stephan Kruegel, Manfred Horstmann 2004-11-23
6822430 Method of assessing lateral dopant and/or charge carrier profiles Manfred Horstmann, Rolf Stephan 2004-11-23