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USPTO Patent Rankings Data through Dec 31, 2025
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Volker Grimm — 11 Patents

AMD: 6 patents #2,086 of 9,280Top 25%
Globalfoundries: 3 patents #1,029 of 4,424Top 25%
KAKrones Ag: 2 patents #263 of 746Top 40%
Rohrbach, DE: #4 of 52 inventorsTop 8%
Overall (All Time): #435,149 of 4,157,543Top 15%
11 Patents All Time
Volker Grimm has been granted 11 US patents while listed as an inventor at AMD. The first was granted in 2005 and the most recent in November 2019. Volker Grimm ranks #435,149 of 4,157,543 US inventors in our database (top 10.5%). Patent records list Volker Grimm in Rohrbach, DE.

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
10489263 Method for operating a container treatment system with fault diagnosis 2019-11-26
9318345 Enhancing transistor performance by reducing exposure to oxygen plasma in a dual stress liner approach Ronald G. Naumann, Andrey Zakharov, Ralf Richter 2016-04-19 $757,000
9070639 Shrinkage of critical dimensions in a semiconductor device by selective growth of a mask material Dmytro Chumakov 2015-06-30 $2,508,000
9006114 Method for selectively removing a spacer in a dual stress liner approach Kai Frohberg, Heike Salz, Heike Berthold 2015-04-14 $1,171,000
8869636 Method and apparatus for checking gripping elements 2014-10-28
7816273 Technique for removing resist material after high dose implantation in a semiconductor device Christian Krueger, Lutz Eckart 2010-10-19 $4,223,000
7763507 Stressed interlayer dielectric with reduced probability for void generation in a semiconductor device by using an intermediate etch control layer of increased thickness Ralf Richter, Thorsten Kammler, Heike Salz 2010-07-27 $6,860,000
7550396 Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device Kai Frohberg, Sven Mueller, Matthias Lehr, Ralf Richter, Jochen Klais +4 more 2009-06-23 $21,858,000
7166530 Method of forming contact pads Ronald G. Naumann, Tino Meinhold 2007-01-23 $48,946,000
6969676 Method of adjusting etch selectivity by adapting aspect ratios in a multi-level etch process Christoph Schwan, Gunter Grasshoff 2005-11-29 $10,680,000
6897114 Methods of forming a transistor having a recessed gate electrode structure Christian Krueger, Thomas Feudel 2005-05-24 $6,015,000