Issued Patents All Time
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9006114 | Method for selectively removing a spacer in a dual stress liner approach | Kai Frohberg, Volker Grimm, Heike Salz | 2015-04-14 |
| 8883582 | High-K gate electrode structure formed after transistor fabrication by using a spacer | Kai Frohberg, Uwe Griebenow, Katrin Reiche | 2014-11-11 |
| 8497583 | Stress reduction in chip packaging by a stress compensation region formed around the chip | Dmytro Chumakov, Michael Grillberger, Katrin Reiche | 2013-07-30 |
| 8470661 | High-K gate electrode structure formed after transistor fabrication by using a spacer | Kai Frohberg, Uwe Griebenow, Katrin Reiche | 2013-06-25 |
| 8440534 | Threshold adjustment for MOS devices by adapting a spacer width prior to implantation | Uwe Griebenow, Jan Hoentschel, Kai Frohberg, Katrin Reiche, Frank Feustel +1 more | 2013-05-14 |
| 8361844 | Method for adjusting the height of a gate electrode in a semiconductor device | Kai Frohberg, Katrin Reiche, Uwe Griebenow | 2013-01-29 |
| 8349744 | Double deposition of a stress-inducing layer in an interlayer dielectric with intermediate stress relaxation in a semiconductor device | Kai Frohberg, Uwe Griebenow, Katrin Reiche | 2013-01-08 |