KR

Katrin Reiche

Globalfoundries: 8 patents #444 of 4,424Top 15%
AM AMD: 5 patents #2,159 of 9,279Top 25%
Overall (All Time): #381,429 of 4,157,543Top 10%
13
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
9590056 Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers Kai Frohberg, Marco Lepper 2017-03-07
9269809 Methods for forming protection layers on sidewalls of contact etch stop layers Kai Frohberg, Marco Lepper 2016-02-23
8941182 Buried sublevel metallizations for improved transistor density Kai Frohberg, Dominik Olligs, Jens Heinrich 2015-01-27
8883582 High-K gate electrode structure formed after transistor fabrication by using a spacer Kai Frohberg, Uwe Griebenow, Heike Berthold 2014-11-11
8536052 Semiconductor device comprising contact elements with silicided sidewall regions Jens Heinrich, Kai Frohberg 2013-09-17
8536050 Selective shrinkage of contact elements in a semiconductor device Kai Frohberg, Ralf Richter, Torsten Huisinga 2013-09-17
8497583 Stress reduction in chip packaging by a stress compensation region formed around the chip Dmytro Chumakov, Michael Grillberger, Heike Berthold 2013-07-30
8492217 Methods of forming conductive contacts with reduced dimensions Kai Frohberg, Dominik Olligs, Daniel Prochnow 2013-07-23
8470661 High-K gate electrode structure formed after transistor fabrication by using a spacer Kai Frohberg, Uwe Griebenow, Heike Berthold 2013-06-25
8440534 Threshold adjustment for MOS devices by adapting a spacer width prior to implantation Uwe Griebenow, Jan Hoentschel, Kai Frohberg, Heike Berthold, Frank Feustel +1 more 2013-05-14
8361844 Method for adjusting the height of a gate electrode in a semiconductor device Kai Frohberg, Heike Berthold, Uwe Griebenow 2013-01-29
8349744 Double deposition of a stress-inducing layer in an interlayer dielectric with intermediate stress relaxation in a semiconductor device Kai Frohberg, Uwe Griebenow, Heike Berthold 2013-01-08
8318598 Contacts and vias of a semiconductor device formed by a hard mask and double exposure Sven Beyer, Kai Frohberg, Kerstin Ruttloff 2012-11-27