Issued Patents All Time
Showing 1–25 of 90 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9761689 | Method of forming a semiconductor device and according semiconductor device | Dominic Thurmer, Hans-Juergen Thees, Peter Moll, Heike Scholz | 2017-09-12 |
| 9590056 | Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers | Marco Lepper, Katrin Reiche | 2017-03-07 |
| 9269809 | Methods for forming protection layers on sidewalls of contact etch stop layers | Marco Lepper, Katrin Reiche | 2016-02-23 |
| 9245860 | Metallization system of a semiconductor device including metal pillars having a reduced diameter at the bottom | Frank Feustel, Thomas Werner | 2016-01-26 |
| 9196684 | Tensile nitride profile shaper etch to provide void free gapfill | Peter Moll, Dominik Olligs, Heike Scholz | 2015-11-24 |
| 9159661 | Integrated circuits with close electrical contacts and methods for fabricating the same | Peter Moll, Heike Scholz | 2015-10-13 |
| 9153684 | Semiconductor fuses in a semiconductor device comprising metal gates | Jens Heinrich, Ralf Richter | 2015-10-06 |
| 9006114 | Method for selectively removing a spacer in a dual stress liner approach | Volker Grimm, Heike Salz, Heike Berthold | 2015-04-14 |
| 8941182 | Buried sublevel metallizations for improved transistor density | Dominik Olligs, Jens Heinrich, Katrin Reiche | 2015-01-27 |
| 8883582 | High-K gate electrode structure formed after transistor fabrication by using a spacer | Uwe Griebenow, Katrin Reiche, Heike Berthold | 2014-11-11 |
| 8877597 | Embedding metal silicide contact regions reliably into highly doped drain and source regions by a stop implantation | Jens Heinrich, Frank Feustel | 2014-11-04 |
| 8859418 | Methods of forming conductive structures using a dual metal hard mask technique | Torsten Huisinga, Jens Hahn | 2014-10-14 |
| 8859398 | Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge | Tobias Letz, Frank Feustel | 2014-10-14 |
| 8835303 | Metallization system of a semiconductor device comprising extra-tapered transition vias | Frank Feustel, Thomas Werner | 2014-09-16 |
| 8828887 | Restricted stress regions formed in the contact level of a semiconductor device | Frank Feustel, Thomas Werner | 2014-09-09 |
| 8786088 | Semiconductor device including ultra low-K (ULK) metallization stacks with reduced chip-package interaction | Torsten Huisinga, Jens Heinrich, Frank Feustel | 2014-07-22 |
| 8772178 | Technique for forming a dielectric interlayer above a structure including closely spaced lines | Hartmut Ruelke, Christof Streck | 2014-07-08 |
| 8735237 | Method for increasing penetration depth of drain and source implantation species for a given gate height | Uwe Griebenow, Frank Feustel, Thomas Werner | 2014-05-27 |
| 8722511 | Reduced topography in isolation regions of a semiconductor device by applying a deposition/etch sequence prior to forming the interlayer dielectric | Ralf Richter, Peter Javorka | 2014-05-13 |
| 8673696 | SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage | Peter Baars, Frank Jakubowski, Jens Heinrich, Marco Lepper, Jana Schlott | 2014-03-18 |
| 8658494 | Dual contact metallization including electroless plating in a semiconductor device | Juergen Boemmels, Matthias Schaller, Sven Mueller | 2014-02-25 |
| 8615145 | Semiconductor device comprising a buried waveguide for device internal optical communication | Uwe Griebenow, Jan Hoentschel | 2013-12-24 |
| 8609524 | Method for making semiconductor device comprising replacement gate electrode structures with an enhanced diffusion barrier | Frank Feustal, Thomas Werner | 2013-12-17 |
| 8580684 | Contact elements of semiconductor devices comprising a continuous transition to metal lines of a metallization layer | Robert Seidel, Carsten Peters | 2013-11-12 |
| 8536052 | Semiconductor device comprising contact elements with silicided sidewall regions | Jens Heinrich, Katrin Reiche | 2013-09-17 |