| 9761689 |
Method of forming a semiconductor device and according semiconductor device |
Dominic Thurmer, Hans-Juergen Thees, Peter Moll, Heike Scholz |
2017-09-12 |
$7,865,000 |
| 9590056 |
Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers |
Marco Lepper, Katrin Reiche |
2017-03-07 |
$9,679,000 |
| 9269809 |
Methods for forming protection layers on sidewalls of contact etch stop layers |
Marco Lepper, Katrin Reiche |
2016-02-23 |
$655,000 |
| 9245860 |
Metallization system of a semiconductor device including metal pillars having a reduced diameter at the bottom |
Frank Feustel, Thomas Werner |
2016-01-26 |
$652,000 |
| 9196684 |
Tensile nitride profile shaper etch to provide void free gapfill |
Peter Moll, Dominik Olligs, Heike Scholz |
2015-11-24 |
$992,000 |
| 9159661 |
Integrated circuits with close electrical contacts and methods for fabricating the same |
Peter Moll, Heike Scholz |
2015-10-13 |
$929,000 |
| 9153684 |
Semiconductor fuses in a semiconductor device comprising metal gates |
Jens Heinrich, Ralf Richter |
2015-10-06 |
$1,521,000 |
| 9006114 |
Method for selectively removing a spacer in a dual stress liner approach |
Volker Grimm, Heike Salz, Heike Berthold |
2015-04-14 |
$1,171,000 |
| 8941182 |
Buried sublevel metallizations for improved transistor density |
Dominik Olligs, Jens Heinrich, Katrin Reiche |
2015-01-27 |
$1,455,000 |
| 8883582 |
High-K gate electrode structure formed after transistor fabrication by using a spacer |
Uwe Griebenow, Katrin Reiche, Heike Berthold |
2014-11-11 |
$1,428,000 |
| 8877597 |
Embedding metal silicide contact regions reliably into highly doped drain and source regions by a stop implantation |
Jens Heinrich, Frank Feustel |
2014-11-04 |
$1,195,000 |
| 8859418 |
Methods of forming conductive structures using a dual metal hard mask technique |
Torsten Huisinga, Jens Hahn |
2014-10-14 |
$1,406,000 |
| 8859398 |
Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge |
Tobias Letz, Frank Feustel |
2014-10-14 |
$1,406,000 |
| 8835303 |
Metallization system of a semiconductor device comprising extra-tapered transition vias |
Frank Feustel, Thomas Werner |
2014-09-16 |
$1,458,000 |
| 8828887 |
Restricted stress regions formed in the contact level of a semiconductor device |
Frank Feustel, Thomas Werner |
2014-09-09 |
$2,134,000 |
| 8786088 |
Semiconductor device including ultra low-K (ULK) metallization stacks with reduced chip-package interaction |
Torsten Huisinga, Jens Heinrich, Frank Feustel |
2014-07-22 |
$2,511,000 |
| 8772178 |
Technique for forming a dielectric interlayer above a structure including closely spaced lines |
Hartmut Ruelke, Christof Streck |
2014-07-08 |
$2,496,000 |
| 8735237 |
Method for increasing penetration depth of drain and source implantation species for a given gate height |
Uwe Griebenow, Frank Feustel, Thomas Werner |
2014-05-27 |
$1,638,000 |
| 8722511 |
Reduced topography in isolation regions of a semiconductor device by applying a deposition/etch sequence prior to forming the interlayer dielectric |
Ralf Richter, Peter Javorka |
2014-05-13 |
$1,755,000 |
| 8673696 |
SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage |
Peter Baars, Frank Jakubowski, Jens Heinrich, Marco Lepper, Jana Schlott |
2014-03-18 |
$1,595,000 |
| 8658494 |
Dual contact metallization including electroless plating in a semiconductor device |
Juergen Boemmels, Matthias Schaller, Sven Mueller |
2014-02-25 |
$3,030,000 |
| 8615145 |
Semiconductor device comprising a buried waveguide for device internal optical communication |
Uwe Griebenow, Jan Hoentschel |
2013-12-24 |
$5,340,000 |
| 8609524 |
Method for making semiconductor device comprising replacement gate electrode structures with an enhanced diffusion barrier |
Frank Feustal, Thomas Werner |
2013-12-17 |
$1,491,000 |
| 8580684 |
Contact elements of semiconductor devices comprising a continuous transition to metal lines of a metallization layer |
Robert Seidel, Carsten Peters |
2013-11-12 |
$1,972,000 |
| 8536052 |
Semiconductor device comprising contact elements with silicided sidewall regions |
Jens Heinrich, Katrin Reiche |
2013-09-17 |
$3,416,000 |
