TL

Tobias Letz

Globalfoundries: 6 patents #578 of 4,424Top 15%
AM AMD: 4 patents #2,565 of 9,279Top 30%
📍 Dresden, DE: #227 of 3,254 inventorsTop 7%
Overall (All Time): #515,359 of 4,157,543Top 15%
10
Patents All Time

Issued Patents All Time

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDate
8859398 Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge Frank Feustel, Kai Frohberg 2014-10-14
8841140 Technique for forming a passivation layer without a terminal metal Matthias Lehr, Joerg Hohage, Frank Kuechenmeister 2014-09-23
8673087 Reducing copper defects during a wet chemical cleaning of exposed copper surfaces in a metallization layer of a semiconductor device Frank Feustel, Christin Bartsch, Andreas Ott 2014-03-18
8426312 Method of reducing contamination by providing an etch stop layer at the substrate edge Ralf Richter, Holger Schuehrer 2013-04-23
8323989 Test system and method of reducing damage in seed layers in metallization systems of semiconductor devices Frank Feustel, Frank Koschinsky 2012-12-04
8193086 Local silicidation of via bottoms in metallization systems of semiconductor devices Frank Feustel 2012-06-05
7924569 Semiconductor device comprising an in-chip active heat transfer system 2011-04-12
7879709 Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure Frank Feustel, Carsten Peters 2011-02-01
7820536 Method for removing a passivation layer prior to depositing a barrier layer in a copper metallization layer Holger Schuehrer, Frank Koschinsky 2010-10-26
7781343 Semiconductor substrate having a protection layer at the substrate back side Holger Schuehrer, Markus Nopper 2010-08-24