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Semiconductor devices having through-contacts and related fabrication methods |
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Method of reducing contamination by providing an etch stop layer at the substrate edge |
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2013-04-23 |
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Contact optimization for enhancing stress transfer in closely spaced transistors |
Ralf Richter, Kai Frohberg |
2013-02-26 |
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Method and apparatus for reducing semiconductor package tensile stress |
E. Todd Ryan, Seung-Hyun Rhee |
2012-07-03 |
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Void sealing in a dielectric material of a contact level of a semiconductor device comprising closely spaced transistors |
Ralf Richter, Kai Frohberg |
2012-03-06 |
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Reducing metal voids in a metallization layer stack of a semiconductor device by providing a dielectric barrier layer |
Juergen Boemmels |
2012-01-17 |
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Reducing contamination of semiconductor substrates during BEOL processing by performing a deposition/etch cycle during barrier deposition |
Frank Koschinsky, Matthias Lehr |
2011-10-18 |
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Method for removing a passivation layer prior to depositing a barrier layer in a copper metallization layer |
Tobias Letz, Frank Koschinsky |
2010-10-26 |
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Semiconductor substrate having a protection layer at the substrate back side |
Tobias Letz, Markus Nopper |
2010-08-24 |
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Test structure for determining characteristics of semiconductor alloys in SOI transistors by x-ray diffraction |
Kai Frohberg, Thomas Werner |
2010-07-27 |
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Technique for non-destructive metal delamination monitoring in semiconductor devices |
Ralf Richter, Carsten Peters |
2009-12-29 |
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Method and semiconductor structure for monitoring the fabrication of interconnect structures and contacts in a semiconductor device |
Matthias Lehr, Kai Frohberg |
2009-02-17 |
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Method of reducing contamination by removing an interlayer dielectric from the substrate edge |
Christin Bartsch, Carsten Hartig |
2008-08-12 |
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Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stress |
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2008-07-08 |
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Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer |
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2007-08-21 |
