Issued Patents All Time
Showing 25 most recent of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8841140 | Technique for forming a passivation layer without a terminal metal | Tobias Letz, Matthias Lehr, Frank Kuechenmeister | 2014-09-23 |
| 8828888 | Protection of reactive metal surfaces of semiconductor devices during shipping by providing an additional protection layer | Matthias Lehr, Andreas Ott | 2014-09-09 |
| 8759232 | Compressive stress transfer in an interlayer dielectric of a semiconductor device by providing a bi-layer of superior adhesion and internal stress | Hartmut Ruelke, Ralf Richter | 2014-06-24 |
| 8546274 | Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material | Michael Finken, Ralf Richter | 2013-10-01 |
| 8450172 | Non-insulating stressed material layers in a contact level of semiconductor devices | Ralf Richter, Hartmut Ruelke | 2013-05-28 |
| 8338284 | Stress engineering in a contact level of semiconductor devices by stressed conductive layers and an isolation spacer | Kai Frohberg, Hartmut Ruelke, Volker Jaschke, Frank Seliger | 2012-12-25 |
| 8211795 | Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment | Volker Kahlert, Hartmut Ruelke, Ulrich Mayer | 2012-07-03 |
| 8153524 | Providing superior electromigration performance and reducing deterioration of sensitive low-k dielectrics in metallization systems of semiconductor devices | Oliver Aubel, Frank Feustel, Axel Preusse | 2012-04-10 |
| 8053354 | Reduced wafer warpage in semiconductors by stress engineering in the metallization system | Matthias Lehr, Frank Koschinsky | 2011-11-08 |
| 8034726 | Interlayer dielectric material in a semiconductor device comprising a doublet structure of stressed materials | Ralf Richter, Michael Finken, Heike Salz | 2011-10-11 |
| 7994059 | Enhanced stress transfer in an interlayer dielectric by using an additional stress layer above a dual stress liner in a semiconductor device | Ralf Richter, Martin Gerhardt, Martin Mazur | 2011-08-09 |
| 7994072 | Stress transfer by sequentially providing a highly stressed etch stop material and an interlayer dielectric in a contact layer stack of a semiconductor device | Michael Finken, Ralf Richter | 2011-08-09 |
| 7938973 | Arc layer having a reduced flaking tendency and a method of manufacturing the same | Ralf Richter, Martin Mazur | 2011-05-10 |
| 7906383 | Stress transfer in an interlayer dielectric by providing a stressed dielectric layer above a stress-neutral dielectric material in a semiconductor device | Ralf Richter, Andy Wei, Manfred Horstmann | 2011-03-15 |
| 7875561 | Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material | Michael Finken, Ralf Richter | 2011-01-25 |
| 7867917 | Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity | Matthias Lehr, Volker Kahlert | 2011-01-11 |
| 7858531 | Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region | Ralf Richter, Michael Finken, Jana Schlott | 2010-12-28 |
| 7678699 | Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction | Matthias Lehr, Volker Kahlert | 2010-03-16 |
| 7608912 | Technique for creating different mechanical strain in different CPU regions by forming an etch stop layer having differently modified intrinsic stress | Kai Frohberg, Thomas Werner | 2009-10-27 |
| 7550396 | Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device | Kai Frohberg, Volker Grimm, Sven Mueller, Matthias Lehr, Ralf Richter +4 more | 2009-06-23 |
| 7491638 | Method of forming an insulating capping layer for a copper metallization layer | Matthias Lehr, Volker Kahlert | 2009-02-17 |
| 7476626 | Etch stop layer for a metallization layer with enhanced etch selectivity and hermeticity | Matthias Lehr, Volker Kahlert | 2009-01-13 |
| 7396718 | Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stress | Kai Frohberg, Matthias Schaller, Holger Schuehrer | 2008-07-08 |
| 7381602 | Method of forming a field effect transistor comprising a stressed channel region | Hartmut Ruelke, Kai Frohberg | 2008-06-03 |
| 7341903 | Method of forming a field effect transistor having a stressed channel region | Hartmut Ruelke, Kai Frohberg | 2008-03-11 |