| 8841140 |
Technique for forming a passivation layer without a terminal metal |
Tobias Letz, Matthias Lehr, Frank Kuechenmeister |
2014-09-23 |
$5,345,000 |
| 8828888 |
Protection of reactive metal surfaces of semiconductor devices during shipping by providing an additional protection layer |
Matthias Lehr, Andreas Ott |
2014-09-09 |
$2,134,000 |
| 8759232 |
Compressive stress transfer in an interlayer dielectric of a semiconductor device by providing a bi-layer of superior adhesion and internal stress |
Hartmut Ruelke, Ralf Richter |
2014-06-24 |
$2,752,000 |
| 8546274 |
Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material |
Michael Finken, Ralf Richter |
2013-10-01 |
$6,159,000 |
| 8450172 |
Non-insulating stressed material layers in a contact level of semiconductor devices |
Ralf Richter, Hartmut Ruelke |
2013-05-28 |
$3,942,000 |
| 8338284 |
Stress engineering in a contact level of semiconductor devices by stressed conductive layers and an isolation spacer |
Kai Frohberg, Hartmut Ruelke, Volker Jaschke, Frank Seliger |
2012-12-25 |
|
| 8211795 |
Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment |
Volker Kahlert, Hartmut Ruelke, Ulrich Mayer |
2012-07-03 |
$6,918,000 |
| 8153524 |
Providing superior electromigration performance and reducing deterioration of sensitive low-k dielectrics in metallization systems of semiconductor devices |
Oliver Aubel, Frank Feustel, Axel Preusse |
2012-04-10 |
$5,913,000 |
| 8053354 |
Reduced wafer warpage in semiconductors by stress engineering in the metallization system |
Matthias Lehr, Frank Koschinsky |
2011-11-08 |
$4,445,000 |
| 8034726 |
Interlayer dielectric material in a semiconductor device comprising a doublet structure of stressed materials |
Ralf Richter, Michael Finken, Heike Salz |
2011-10-11 |
$4,727,000 |
| 7994059 |
Enhanced stress transfer in an interlayer dielectric by using an additional stress layer above a dual stress liner in a semiconductor device |
Ralf Richter, Martin Gerhardt, Martin Mazur |
2011-08-09 |
$3,614,000 |
| 7994072 |
Stress transfer by sequentially providing a highly stressed etch stop material and an interlayer dielectric in a contact layer stack of a semiconductor device |
Michael Finken, Ralf Richter |
2011-08-09 |
$3,614,000 |
| 7938973 |
Arc layer having a reduced flaking tendency and a method of manufacturing the same |
Ralf Richter, Martin Mazur |
2011-05-10 |
$5,537,000 |
| 7906383 |
Stress transfer in an interlayer dielectric by providing a stressed dielectric layer above a stress-neutral dielectric material in a semiconductor device |
Ralf Richter, Andy Wei, Manfred Horstmann |
2011-03-15 |
$6,095,000 |
| 7875561 |
Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material |
Michael Finken, Ralf Richter |
2011-01-25 |
$8,589,000 |
| 7867917 |
Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity |
Matthias Lehr, Volker Kahlert |
2011-01-11 |
$5,518,000 |
| 7858531 |
Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region |
Ralf Richter, Michael Finken, Jana Schlott |
2010-12-28 |
$4,143,000 |
| 7678699 |
Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction |
Matthias Lehr, Volker Kahlert |
2010-03-16 |
$8,771,000 |
| 7608912 |
Technique for creating different mechanical strain in different CPU regions by forming an etch stop layer having differently modified intrinsic stress |
Kai Frohberg, Thomas Werner |
2009-10-27 |
$8,132,000 |
| 7550396 |
Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device |
Kai Frohberg, Volker Grimm, Sven Mueller, Matthias Lehr, Ralf Richter +4 more |
2009-06-23 |
$21,858,000 |
| 7491638 |
Method of forming an insulating capping layer for a copper metallization layer |
Matthias Lehr, Volker Kahlert |
2009-02-17 |
$4,823,000 |
| 7476626 |
Etch stop layer for a metallization layer with enhanced etch selectivity and hermeticity |
Matthias Lehr, Volker Kahlert |
2009-01-13 |
$12,331,000 |
| 7396718 |
Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stress |
Kai Frohberg, Matthias Schaller, Holger Schuehrer |
2008-07-08 |
$10,607,000 |
| 7381602 |
Method of forming a field effect transistor comprising a stressed channel region |
Hartmut Ruelke, Kai Frohberg |
2008-06-03 |
$5,507,000 |
| 7341903 |
Method of forming a field effect transistor having a stressed channel region |
Hartmut Ruelke, Kai Frohberg |
2008-03-11 |
$39,863,000 |
