| 8847205 |
Spacer for a gate electrode having tensile stress and a method of forming the same |
Katja Huy, Markus Lenski |
2014-09-30 |
$1,660,000 |
| 8772178 |
Technique for forming a dielectric interlayer above a structure including closely spaced lines |
Christof Streck, Kai Frohberg |
2014-07-08 |
$2,496,000 |
| 8759232 |
Compressive stress transfer in an interlayer dielectric of a semiconductor device by providing a bi-layer of superior adhesion and internal stress |
Joerg Hohage, Ralf Richter |
2014-06-24 |
$2,752,000 |
| 8741787 |
Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatment |
Ulrich Mayer, Christof Streck |
2014-06-03 |
$2,732,000 |
| 8609555 |
Increased stability of a complex material stack in a semiconductor device by providing fluorine enriched interfaces |
Christof Streck, Heinz-Juergen Voss |
2013-12-17 |
$1,491,000 |
| 8450172 |
Non-insulating stressed material layers in a contact level of semiconductor devices |
Ralf Richter, Joerg Hohage |
2013-05-28 |
$3,942,000 |
| 8415257 |
Enhanced adhesion of PECVD carbon on dielectric materials by providing an adhesion interface |
Volker Jaschke |
2013-04-09 |
$4,395,000 |
| 8338284 |
Stress engineering in a contact level of semiconductor devices by stressed conductive layers and an isolation spacer |
Kai Frohberg, Volker Jaschke, Joerg Hohage, Frank Seliger |
2012-12-25 |
|
| 8211795 |
Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment |
Joerg Hohage, Volker Kahlert, Ulrich Mayer |
2012-07-03 |
$6,918,000 |
| 8084088 |
Method of improving the wafer-to-wafer thickness uniformity of silicon nitride layers |
Katja Huy, Michael D. Turner |
2011-12-27 |
$7,638,000 |
| 7998882 |
Particle reduction in PECVD processes for depositing low-k material by using a plasma assisted post-deposition step |
Ulrich Mayer |
2011-08-16 |
$3,370,000 |
| 7807233 |
Method of forming a TEOS cap layer at low temperature and reduced deposition rate |
Katja Huy, Karla Romero |
2010-10-05 |
$25,101,000 |
| 7381660 |
Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thickness |
Larry Zhao, Jeremy I. Martin |
2008-06-03 |
$5,507,000 |
| 7381602 |
Method of forming a field effect transistor comprising a stressed channel region |
Joerg Hohage, Kai Frohberg |
2008-06-03 |
$5,507,000 |
| 7341903 |
Method of forming a field effect transistor having a stressed channel region |
Joerg Hohage, Kai Frohberg |
2008-03-11 |
$39,863,000 |
| 7326646 |
Nitrogen-free ARC layer and a method of manufacturing the same |
Katja Huy, Sven Muehle |
2008-02-05 |
$6,320,000 |
| 7314824 |
Nitrogen-free ARC/capping layer and method of manufacturing the same |
Kai Frohberg, Sven Muehle |
2008-01-01 |
|
| 7030044 |
Method of forming a cap layer having anti-reflective characteristics on top of a low-k dielectric |
Joerg Hohage, Thomas Werner, Frank Mauersberger |
2006-04-18 |
$11,889,000 |
| 7022602 |
Nitrogen-enriched low-k barrier layer for a copper metallization layer |
Joerg Hohage, Thomas Werner, Michael Kiene |
2006-04-04 |
$14,413,000 |
| 6989601 |
Copper damascene with low-k capping layer and improved electromigration reliability |
Minh Van Ngo, Jeremy I. Martin |
2006-01-24 |
$11,964,000 |
| 6927161 |
Low-k dielectric layer stack including an etch indicator layer for use in the dual damascene technique |
Christof Streck, Georg Sulzer |
2005-08-09 |
$9,550,000 |
| 6893956 |
Barrier layer for a copper metallization layer including a low-k dielectric |
Joerg Hohage, Thomas Werner, Massud Aminpur |
2005-05-17 |
$3,810,000 |
| 6797652 |
Copper damascene with low-k capping layer and improved electromigration reliability |
Minh Van Ngo, Jeremy I. Martin |
2004-09-28 |
$1,915,000 |
| 6720242 |
Method of forming a substrate contact in a field effect transistor formed over a buried insulator layer |
Gert Burbach, Frank Heinlein, Johannes Groschopf, Gotthard Jungnickel, Carsten Hartig |
2004-04-13 |
$3,617,000 |
| 6599827 |
Methods of forming capped copper interconnects with improved electromigration resistance |
Minh Van Ngo, Steven C. Avanzino, Amit P. Marathe |
2003-07-29 |
$3,092,000 |
