CH

Carsten Hartig

AM AMD: 8 patents #1,491 of 9,279Top 20%
Globalfoundries: 5 patents #673 of 4,424Top 20%
GP Globalfoundries Singapore Pte.: 1 patents #427 of 828Top 55%
Overall (All Time): #349,316 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
10115621 Method for in-die overlay control using FEOL dummy fill layer Peter Moll, Martin Schmidt, Matthias Ruhm, Stefan Thierbach, Stefan Rongen +3 more 2018-10-30
9177873 Systems and methods for fabricating semiconductor device structures Alok Vaid, Lokesh Subramany 2015-11-03
9171765 Inline residual layer detection and characterization post via post etch using CD-SEM Daniel Fischer 2015-10-27
9091667 Detection of particle contamination on wafers Adam Michal Urbanowicz, Daniel Fischer 2015-07-28
9029855 Layout for reticle and wafer scanning electron microscope registration or overlay measurements Guo Xiang Ning, Paul Ackmann, Fanghong Gn 2015-05-12
8892237 Systems and methods for fabricating semiconductor device structures using different metrology tools Alok Vaid 2014-11-18
7663766 Incorporating film optical property measurements into scatterometry metrology Jason P. Cain 2010-02-16
7410885 Method of reducing contamination by removing an interlayer dielectric from the substrate edge Holger Schuehrer, Christin Bartsch 2008-08-12
7259091 Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer Holger Schuehrer, Christin Bartsch, Kai Frohberg 2007-08-21
7098140 Method of compensating for etch rate non-uniformities by ion implantation Matthias Schaller, Christoph Schwan 2006-08-29
6936383 Method of defining the dimensions of circuit elements by using spacer deposition techniques Martin Mazur, Georg Sulzer 2005-08-30
6838010 System and method for wafer-based controlled patterning of features with critical dimensions Gunter Grasshoff 2005-01-04
6724096 Die corner alignment structure Thomas Werner, Gunter Grasshoff, Bernd Schulz 2004-04-20
6720242 Method of forming a substrate contact in a field effect transistor formed over a buried insulator layer Gert Burbach, Frank Heinlein, Johannes Groschopf, Gotthard Jungnickel, Hartmut Ruelke 2004-04-13