JG

Johannes Groschopf

Globalfoundries: 8 patents #444 of 4,424Top 15%
AM AMD: 7 patents #1,662 of 9,279Top 20%
FS Freeescale Semiconductor: 1 patents #2,021 of 3,767Top 55%
Motorola: 1 patents #6,475 of 12,470Top 55%
📍 Wainsdorf, NY: #1 of 1 inventorsTop 100%
Overall (All Time): #299,234 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
8748302 Replacement gate approach for high-k metal gate stacks by using a multi-layer contact level Christopher M. Prindle, Andreas Ott 2014-06-10
8679924 Self-aligned multiple gate transistor formed on a bulk substrate Andy Wei, Vivien Schroeder, Thilo Scheiper, Thomas Werner 2014-03-25
8585465 Planarization of a material system in a semiconductor device by using a non-selective in situ prepared slurry Rico Hueselitz, Marco Kitsche, Katja Steffen 2013-11-19
8506770 Electrochemical planarization system comprising enhanced electrolyte flow Axel Kiesel 2013-08-13
8357575 Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers Klaus Hempel, Patrick Press, Vivien Schroeder, Berthold Reimer 2013-01-22
8338306 Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors Jens Heinrich, Ralf Richter, Katja Steffen, Frank Seliger, Andreas Ott +2 more 2012-12-25
8247281 Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers Klaus Hempel, Patrick Press, Vivien Schroeder, Berthold Reimer 2012-08-21
8021942 Method of forming CMOS device having gate insulation layers of different type and thickness Andy Wei, Andrew Waite, Martin Trentzsch, Gunter Grasshoff, Andreas Ott 2011-09-20
7767508 Method for forming offset spacers for semiconductor device arrangements Philip A. Fisher, Laura A. Brown, Huicai Zhong 2010-08-03
7528059 Method for reducing polish-induced damage in a contact structure by forming a capping layer Kai Frohberg, Sandra Bau 2009-05-05
7456105 CMP metal polishing slurry and process with reduced solids concentration Kevin Cooper, Jennifer L. Cooper, János Farkas, John C. Flake, Yuri Solomentsev 2008-11-25
7387970 Method of using an aqueous solution and composition thereof Kevin Cooper, John C. Flake, Yuri Solomentsev 2008-06-17
7223698 Method of forming a semiconductor arrangement with reduced field-to active step height Douglas J. Bonser, Srikanteswara Dakshina-Murthy, Mark Kelling, John G. Pellerin, Edward Asuka Nomura 2007-05-29
7091106 Method of reducing STI divot formation during semiconductor device fabrication Douglas J. Bonser, Srikanteswara Dakshina-Murthy, John G. Pellerin, Jon D. Cheek 2006-08-15
6720242 Method of forming a substrate contact in a field effect transistor formed over a buried insulator layer Gert Burbach, Frank Heinlein, Gotthard Jungnickel, Hartmut Ruelke, Carsten Hartig 2004-04-13
6720264 Prevention of precipitation defects on copper interconnects during CMP by use of solutions containing organic compounds with silica adsorption and copper corrosion inhibiting properties Kashmir Sahota, Diana M. Schonauer, Gerd Marxsen, Steven C. Avanzino 2004-04-13