Issued Patents All Time
Showing 25 most recent of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8629535 | Mask for forming integrated circuit | Richard J. Huang, Scott A. Bell, Srikanteswara Dakshina-Murthy, Richard Nguyen, Cyrus E. Tabery +1 more | 2014-01-14 |
| 8030709 | Metal gate stack and semiconductor gate stack for CMOS devices | Charlotte DeWan Adams, Bruce B. Doris, William K. Henson, Jeffrey W. Sleight | 2011-10-04 |
| 7767508 | Method for forming offset spacers for semiconductor device arrangements | Laura A. Brown, Johannes Groschopf, Huicai Zhong | 2010-08-03 |
| 7521304 | Method for forming integrated circuit | Richard J. Huang, Scott A. Bell, Srikanteswara Dakshina-Murthy, Richard Nguyen, Cyrus E. Tabery +1 more | 2009-04-21 |
| 7268066 | Method for semiconductor gate line dimension reduction | Douglas J. Bonser, Marina V. Plat, Chih-Yuh Yang, Scott A. Bell, Srikanteswara Dakshina-Murthy +1 more | 2007-09-11 |
| 7183169 | Method and arrangement for reducing source/drain resistance with epitaxial growth | Andrew Waite, Scott Luning | 2007-02-27 |
| 7169711 | Method of using carbon spacers for critical dimension (CD) reduction | Christopher F. Lyons, Richard J. Huang, Cyrus E. Tabery | 2007-01-30 |
| 7015124 | Use of amorphous carbon for gate patterning | Richard J. Huang, Cyrus E. Tabery | 2006-03-21 |
| 6884733 | Use of amorphous carbon hard mask for gate patterning to eliminate requirement of poly re-oxidation | Srikanteswara Dakshina-Murthy, Scott A. Bell, David E. Brown | 2005-04-26 |
| 6875664 | Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material | Richard J. Huang, Srikanteswara Dakshina-Murthy, Cyrus E. Tabery, Lu You | 2005-04-05 |
| 6849530 | Method for semiconductor gate line dimension reduction | Douglas J. Bonser, Marina V. Plat, Chih-Yuh Yang, Scott A. Bell, Srikanteswara Dakshina-Murthy +1 more | 2005-02-01 |
| 6828259 | Enhanced transistor gate using E-beam radiation | Chih-Yuh Yang, Marina V. Plat, Russell R.A. Callahan, Ashok M. Khathuria | 2004-12-07 |
| 6825114 | Selective stress-inducing implant and resulting pattern distortion in amorphous carbon patterning | Christopher F. Lyons, Srikanteswara Dakshina-Murthy | 2004-11-30 |
| 6784073 | Method of making semiconductor-on-insulator device with thermoelectric cooler | — | 2004-08-31 |
| 6773998 | Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterning | Marina V. Plat, Chih-Yuh Yang, Christopher F. Lyons, Scott A. Bell, Douglas J. Bonser +2 more | 2004-08-10 |
| 6764949 | Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication | Douglas J. Bonser, Marina V. Plat, Chih-Yuh Yang, Scott A. Bell, Darin A. Chan +6 more | 2004-07-20 |
| 6764947 | Method for reducing gate line deformation and reducing gate line widths in semiconductor devices | Darin A. Chan, Douglas J. Bonser, Marina V. Plat, Marilyn I. Wright, Chih-Yuh Yang +2 more | 2004-07-20 |
| 6756255 | CMOS process with an integrated, high performance, silicide agglomeration fuse | Ciby Thuruthiyil | 2004-06-29 |
| 6747333 | Method and apparatus for STI using passivation material for trench bottom liner | Qi Xiang | 2004-06-08 |
| 6723666 | Method for reducing gate oxide surface irregularities | William G. En | 2004-04-20 |
| 6673684 | Use of diamond as a hard mask material | Richard J. Huang, Cyrus E. Tabery | 2004-01-06 |
| 6674128 | Semiconductor-on-insulator device with thermoelectric cooler on surface | — | 2004-01-06 |
| 6664154 | Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processes | Scott A. Bell, Srikanteswara Dakshina-Murthy, Cyrus E. Tabery | 2003-12-16 |
| 6653202 | Method of shallow trench isolation (STI) formation using amorphous carbon | Richard J. Huang | 2003-11-25 |
| 6624300 | Method for concentrating beta-glucan film | Richard C. Potter, Kirk Hash, John D. Neidt | 2003-09-23 |