Issued Patents All Time
Showing 25 most recent of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8629535 | Mask for forming integrated circuit | Scott A. Bell, Srikanteswara Dakshina-Murthy, Philip A. Fisher, Richard Nguyen, Cyrus E. Tabery +1 more | 2014-01-14 |
| 7521304 | Method for forming integrated circuit | Scott A. Bell, Srikanteswara Dakshina-Murthy, Philip A. Fisher, Richard Nguyen, Cyrus E. Tabery +1 more | 2009-04-21 |
| 7183198 | Method for forming a hardmask employing multiple independently formed layers of a capping material to reduce pinholes | Pei-Yuan Gao, Lu You | 2007-02-27 |
| 7169711 | Method of using carbon spacers for critical dimension (CD) reduction | Christopher F. Lyons, Philip A. Fisher, Cyrus E. Tabery | 2007-01-30 |
| 7141502 | Slurry-less polishing for removal of excess interconnect material during fabrication of a silicon integrated circuit | James J. Xie, Kashmir Sahota | 2006-11-28 |
| 7132306 | Method of forming an interlevel dielectric layer employing dielectric etch-back process without extra mask set | Seung-Hyun Rhee, Calvin T. Gabriel | 2006-11-07 |
| 7084071 | Use of multilayer amorphous carbon ARC stack to eliminate line warpage phenomenon | Srikanteswara Dakshina-Murthy, Scott A. Bell, Richard Nguyen, Cyrus E. Tabery | 2006-08-01 |
| 7033960 | Multi-chamber deposition of silicon oxynitride film for patterning | Lu You, Pei-Yuan Gao | 2006-04-25 |
| 7015124 | Use of amorphous carbon for gate patterning | Philip A. Fisher, Cyrus E. Tabery | 2006-03-21 |
| 6927113 | Semiconductor component and method of manufacture | Kashmir Sahota, Jeremy I. Martin, James J. Xie | 2005-08-09 |
| 6875664 | Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material | Srikanteswara Dakshina-Murthy, Philip A. Fisher, Cyrus E. Tabery, Lu You | 2005-04-05 |
| 6869734 | EUV reflective mask having a carbon film and a method of making such a mask | Christopher F. Lyons, Cyrus E. Tabery | 2005-03-22 |
| 6864556 | CVD organic polymer film for advanced gate patterning | Lu You, Marina V. Plat, Chih-Yuh Yang, Scott A. Bell, Christopher F. Lyons +2 more | 2005-03-08 |
| 6855627 | Method of using amorphous carbon to prevent resist poisoning | Srikanteswara Dakshina-Murthy, Scott A. Bell, Richard Nguyen, Cyrus E. Tabery | 2005-02-15 |
| 6831003 | Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration | Pin-Chin Connie Wang, Darrell M. Erb | 2004-12-14 |
| 6803313 | Method for forming a hardmask employing multiple independently formed layers of a pecvd material to reduce pinholes | Pei-Yuan Gao, Lu You | 2004-10-12 |
| 6689684 | Cu damascene interconnections using barrier/capping layer | Lu You, Fei Wang | 2004-02-10 |
| 6673684 | Use of diamond as a hard mask material | Philip A. Fisher, Cyrus E. Tabery | 2004-01-06 |
| 6653202 | Method of shallow trench isolation (STI) formation using amorphous carbon | Philip A. Fisher | 2003-11-25 |
| 6635943 | Method and system for reducing charge gain and charge loss in interlayer dielectric formation | Angela T. Hui, Tuan Pham, Mark T. Ramsbey, Lu You | 2003-10-21 |
| 6596631 | Method of forming copper interconnect capping layers with improved interface and adhesion | Minh Van Ngo, Hartmut Ruelke, Lothar Mergili, Joerg Hohage, Lu You +1 more | 2003-07-22 |
| 6559017 | Method of using amorphous carbon as spacer material in a disposable spacer process | David E. Brown, Philip A. Fisher, Richard Nguyen, Cyrus E. Tabery | 2003-05-06 |
| 6530340 | Apparatus for manufacturing planar spin-on films | Lu You, Dawn Hopper | 2003-03-11 |
| 6518646 | Semiconductor device with variable composition low-k inter-layer dielectric and method of making | Dawn Hopper, Suzette K. Pangrle, Calvin T. Gabriel, Lu You | 2003-02-11 |
| 6495443 | Method of re-working copper damascene wafers | Sergey Lopatin | 2002-12-17 |