| 11450680 |
Split gate charge trapping memory cells having different select gate and memory gate heights |
Chun Chen, Shenqing Fang |
2022-09-20 |
|
| 11342429 |
Memory first process flow and device |
Shenqing Fang, Chun Chen, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad +1 more |
2022-05-24 |
|
| 11258023 |
Resistive change elements using passivating interface gaps and methods for making same |
Thomas Rueckes, Tatsuya Yamaguchi, Syuji NOZAWA, Nagisa Sato |
2022-02-22 |
|
| 11056646 |
Memory device having programmable impedance elements with a common conductor formed below bit lines |
Venkatesh P. Gopinath, Jeffrey A. Shields, Kuei-Chang Tsai, Chakravarthy Gopalan, Michael A. Van Buskirk |
2021-07-06 |
|
| 10984861 |
Reference circuits and methods for resistive memories |
Ishai Naveh, Venkatesh P. Gopinath, John Dinh |
2021-04-20 |
|
| 10923601 |
Charge trapping split gate device and method of fabricating same |
Chun Chen, Shenqing Fang, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad |
2021-02-16 |
|
| 10818761 |
Memory first process flow and device |
Shenqing Fang, Chun Chen, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad +1 more |
2020-10-27 |
|
| 10777568 |
Split gate charge trapping memory cells having different select gate and memory gate heights |
Chun Chen, Shenqing Fang |
2020-09-15 |
|
| 10403731 |
Memory first process flow and device |
Shenqing Fang, Chun Chen, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad +1 more |
2019-09-03 |
$37,403,000 |
| 10141393 |
Three dimensional capacitor |
Unsoon Kim, Shenqing Fang, Chun Chen, Kuo-Tung Chang |
2018-11-27 |
$16,861,000 |
| 10014380 |
Memory first process flow and device |
Shenqing Fang, Chun Chen, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad +1 more |
2018-07-03 |
$17,064,000 |
| 9966477 |
Charge trapping split gate device and method of fabricating same |
Chun Chen, Shenqing Fang, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad |
2018-05-08 |
$20,001,000 |
| 9922833 |
Charge trapping split gate embedded flash memory and associated methods |
Chun Chen, Sameer Haddad, Kuo-Tung Chang, Unsoon Kim, Shenqing Fang +2 more |
2018-03-20 |
$14,461,000 |
| 9917166 |
Memory first process flow and device |
Shenqing Fang, Chun Chen, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad +1 more |
2018-03-13 |
$22,144,000 |
| 9590079 |
Use disposable gate cap to form transistors, and split gate charge trapping memory cells |
Chun Chen, Shenqing Fang |
2017-03-07 |
$3,144,000 |
| 9368644 |
Gate formation memory by planarization |
Shenqing Fang, Chun Chen, David Matsumoto |
2016-06-14 |
$4,253,000 |
| 9368606 |
Memory first process flow and device |
Shenqing Fang, Chun Chen, Unsoon Kim, Kuo-Tung Chang, Sameer Haddad +1 more |
2016-06-14 |
$4,253,000 |
| 9209197 |
Memory gate landing pad made from dummy features |
Chun Chen, Unsoon Kim, Shenqing Fang |
2015-12-08 |
$12,715,000 |
| 8957472 |
Memory device having trapezoidal bitlines and method of fabricating same |
Ashot Melik-Martirosian, Mark Randolph |
2015-02-17 |
$12,381,000 |
| 8816438 |
Process charging protection for split gate charge trapping flash |
Chun Chen, Sameer Haddad, Kuo-Tung Chang, Unsoon Kim, Shenqing Fang |
2014-08-26 |
$1,795,000 |
| 8691647 |
Memory devices containing a high-K dielectric layer |
Wei Zheng, Arvind Halliyal, Jack F. Thomas |
2014-04-08 |
$1,440,000 |
| 8673716 |
Memory manufacturing process with bitline isolation |
Tazrien Kamal, Jean Y. Yang, Emmanuil Lingunis, Hidehiko Shiraiwa, Yu Sun |
2014-03-18 |
$3,810,000 |
| 8368219 |
Buried silicide local interconnect with sidewall spacers and method for making the same |
Arvind Halliyal, Zoran Krivokapic, Matthew S. Buynoski, Nicholas H. Tripsas, Minh Van Ngo +2 more |
2013-02-05 |
|
| 8125018 |
Memory device having trapezoidal bitlines and method of fabricating same |
Ashot Melik-Martirosian, Mark Randolph |
2012-02-28 |
$7,071,000 |
| 8049334 |
Buried silicide local interconnect with sidewall spacers and method for making the same |
Arvind Halliyal, Zoran Krivokapic, Matthew S. Buynoski, Nicholas H. Tripsas, Minh Van Ngo +2 more |
2011-11-01 |
$1,838,000 |
