Issued Patents All Time
Showing 25 most recent of 54 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12029041 | Method of forming high-voltage transistor with thin gate poly | James Pak, Unsoon Kim, Inkuk Kang, Sung-Taeg Kang, Kuo-Tung Chang | 2024-07-02 |
| 11690227 | Method of forming high-voltage transistor with thin gate poly | James Pak, Unsoon Kim, Inkuk Kang, Sung-Taeg Kang, Kuo-Tung Chang | 2023-06-27 |
| 11450680 | Split gate charge trapping memory cells having different select gate and memory gate heights | Mark T. Ramsbey, Shenqing Fang | 2022-09-20 |
| 11342429 | Memory first process flow and device | Shenqing Fang, Unsoon Kim, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad +1 more | 2022-05-24 |
| 11081194 | Suppression of program disturb with bit line and select gate voltage regulation | Kuo-Tung Chang, Yoram Betser, Shivananda Shetty, Giovanni Mazzeo, Tio Wei Neo +1 more | 2021-08-03 |
| 10923601 | Charge trapping split gate device and method of fabricating same | Shenqing Fang, Unsoon Kim, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad | 2021-02-16 |
| 10872898 | Embedded non-volatile memory device and fabrication method of the same | James Pak, Unsoon Kim, Inkuk Kang, Sung-Taeg Kang, Kuo-Tung Chang | 2020-12-22 |
| 10818761 | Memory first process flow and device | Shenqing Fang, Unsoon Kim, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad +1 more | 2020-10-27 |
| 10777568 | Split gate charge trapping memory cells having different select gate and memory gate heights | Mark T. Ramsbey, Shenqing Fang | 2020-09-15 |
| 10686044 | Multi-layer inter-gate dielectric structure and method of manufacturing thereof | Shenqing Fang | 2020-06-16 |
| 10685724 | Suppression of program disturb with bit line and select gate voltage regulation | Kuo-Tung Chang, Yoram Betser, Shivananda Shetty, Giovanni Mazzeo, Tio Wei Neo +1 more | 2020-06-16 |
| 10593688 | Split-gate semiconductor device with L-shaped gate | Scott A. Bell, Lei Xue, Shenqing Fang, Angela T. Hui | 2020-03-17 |
| 10497710 | Split-gate flash cell formed on recessed substrate | Sung-Taeg Kang, James Pak, Unsoon Kim, Inkuk Kang, Kuo-Tung Chang | 2019-12-03 |
| 10446245 | Non-volatile memory array with memory gate line and source line scrambling | Yoram Betser, Kuo-Tung Chang, Amichai Givant, Shivananda Shetty, Shenqing Fang | 2019-10-15 |
| 10403731 | Memory first process flow and device | Shenqing Fang, Unsoon Kim, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad +1 more | 2019-09-03 |
| 10242996 | Method of forming high-voltage transistor with thin gate poly | James Pak, Unsoon Kim, Inkuk Kang, Sung-Taeg Kang, Kuo-Tung Chang | 2019-03-26 |
| 10236299 | Three-dimensional charge trapping NAND cell with discrete charge trapping film | Kuo-Tung Chang, Shenqing Fang | 2019-03-19 |
| 10229745 | Suppression of program disturb with bit line and select gate voltage regulation | Kuo-Tung Chang, Yoram Betser, Shivananda Shetty, Giovanni Mazzeo, Tio Wei Neo +1 more | 2019-03-12 |
| 10192747 | Multi-layer inter-gate dielectric structure and method of manufacturing thereof | Shenqing Fang | 2019-01-29 |
| 10192627 | Non-volatile memory array with memory gate line and source line scrambling | Yoram Betser, Kuo-Tung Chang, Amichai Givant, Shivananda Shetty, Shenqing Fang | 2019-01-29 |
| 10141393 | Three dimensional capacitor | Mark T. Ramsbey, Unsoon Kim, Shenqing Fang, Kuo-Tung Chang | 2018-11-27 |
| 10020316 | Split-gate semiconductor device with L-shaped gate | Scott A. Bell, Lei Xue, Shenqing Fang, Angela T. Hui | 2018-07-10 |
| 10014380 | Memory first process flow and device | Shenqing Fang, Unsoon Kim, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad +1 more | 2018-07-03 |
| 9997253 | Non-volatile memory array with memory gate line and source line scrambling | Yoram Betser, Kuo-Tung Chang, Amichai Givant, Shivananda Shetty, Shenqing Fang | 2018-06-12 |
| 9966477 | Charge trapping split gate device and method of fabricating same | Shenqing Fang, Unsoon Kim, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad | 2018-05-08 |