| 12029041 |
Method of forming high-voltage transistor with thin gate poly |
Chun Chen, James Pak, Inkuk Kang, Sung-Taeg Kang, Kuo-Tung Chang |
2024-07-02 |
|
| 11690227 |
Method of forming high-voltage transistor with thin gate poly |
Chun Chen, James Pak, Inkuk Kang, Sung-Taeg Kang, Kuo-Tung Chang |
2023-06-27 |
|
| 11342429 |
Memory first process flow and device |
Shenqing Fang, Chun Chen, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad +1 more |
2022-05-24 |
|
| 10923601 |
Charge trapping split gate device and method of fabricating same |
Chun Chen, Shenqing Fang, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad |
2021-02-16 |
|
| 10872898 |
Embedded non-volatile memory device and fabrication method of the same |
Chun Chen, James Pak, Inkuk Kang, Sung-Taeg Kang, Kuo-Tung Chang |
2020-12-22 |
|
| 10818761 |
Memory first process flow and device |
Shenqing Fang, Chun Chen, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad +1 more |
2020-10-27 |
|
| 10497710 |
Split-gate flash cell formed on recessed substrate |
Sung-Taeg Kang, James Pak, Inkuk Kang, Chun Chen, Kuo-Tung Chang |
2019-12-03 |
$14,173,000 |
| 10403731 |
Memory first process flow and device |
Shenqing Fang, Chun Chen, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad +1 more |
2019-09-03 |
$37,403,000 |
| 10242996 |
Method of forming high-voltage transistor with thin gate poly |
Chun Chen, James Pak, Inkuk Kang, Sung-Taeg Kang, Kuo-Tung Chang |
2019-03-26 |
$36,237,000 |
| 10177040 |
Manufacturing of FET devices having lightly doped drain and source regions |
Shenqing Fang |
2019-01-08 |
$31,149,000 |
| 10141393 |
Three dimensional capacitor |
Mark T. Ramsbey, Shenqing Fang, Chun Chen, Kuo-Tung Chang |
2018-11-27 |
$16,861,000 |
| 10014380 |
Memory first process flow and device |
Shenqing Fang, Chun Chen, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad +1 more |
2018-07-03 |
$17,064,000 |
| 9966477 |
Charge trapping split gate device and method of fabricating same |
Chun Chen, Shenqing Fang, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad |
2018-05-08 |
$20,001,000 |
| 9922833 |
Charge trapping split gate embedded flash memory and associated methods |
Mark T. Ramsbey, Chun Chen, Sameer Haddad, Kuo-Tung Chang, Shenqing Fang +2 more |
2018-03-20 |
$14,461,000 |
| 9917166 |
Memory first process flow and device |
Shenqing Fang, Chun Chen, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad +1 more |
2018-03-13 |
$22,144,000 |
| 9917211 |
Flash memory cells having trenched storage elements |
Wei Zheng, Chi Chang |
2018-03-13 |
$22,144,000 |
| 9853039 |
Split-gate flash cell formed on recessed substrate |
Sung-Taeg Kang, James Pak, Inkuk Kang, Chun Chen, Kuo-Tung Chang |
2017-12-26 |
$17,542,000 |
| 9368606 |
Memory first process flow and device |
Shenqing Fang, Chun Chen, Mark T. Ramsbey, Kuo-Tung Chang, Sameer Haddad +1 more |
2016-06-14 |
$4,253,000 |
| 9209197 |
Memory gate landing pad made from dummy features |
Mark T. Ramsbey, Chun Chen, Shenqing Fang |
2015-12-08 |
$12,715,000 |
| 9159568 |
Method for fabricating memory cells having split charge storage nodes |
Chungho Lee, Wei Zheng, Chi Chang, Hiroyuki Kinoshita |
2015-10-13 |
$14,028,000 |
| 8816438 |
Process charging protection for split gate charge trapping flash |
Chun Chen, Sameer Haddad, Kuo-Tung Chang, Mark T. Ramsbey, Shenqing Fang |
2014-08-26 |
$1,795,000 |
| 8802537 |
System and method for improving reliability in a semiconductor device |
Yider Wu, Kuo-Tung Chang, Harpreet Sachar |
2014-08-12 |
$1,424,000 |
| 8759894 |
System and method for reducing cross-coupling noise between charge storage elements in a semiconductor device |
Yider Wu, Hiroyuki Ogawa, Angela T. Hui |
2014-06-24 |
|
| 8742486 |
Flash memory cells having trenched storage elements |
Wei Zheng, Chi Chang |
2014-06-03 |
$1,509,000 |
| 8598645 |
System and method for improving mesa width in a semiconductor device |
Angela T. Hui, Yider Wu, Kuo-Tung Chang, Hiroyuki Kinoshita |
2013-12-03 |
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