Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Split-gate flash cell formed on recessed substrate

Split-gate flash cell formed on recessed substrate

US Patent 10497710 · Granted Dec 3, 2019

Estimated economic value: $14,173,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Staggered read recovery for improved read window budget in a three dimensional (2025
Method of forming high-voltage transistor with thin gate poly2024
Method of forming high-voltage transistor with thin gate poly2024
Method of forming high-voltage transistor with thin gate poly2024
Method of forming high-voltage transistor with thin gate poly2024
Method of forming high-voltage transistor with thin gate poly2024
Method of forming high-voltage transistor with thin gate poly2024
Contacts for semiconductor devices2023
Method of forming high-voltage transistor with thin gate poly2023
Method of forming high-voltage transistor with thin gate poly2023
Method of forming high-voltage transistor with thin gate poly2023
Method of forming high-voltage transistor with thin gate poly2023