Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Buried silicide local interconnect with sidewall spacers and method for making the same

Buried silicide local interconnect with sidewall spacers and method for making the same

US Patent 8049334 · Granted Nov 1, 2011

Estimated economic value: $1,838,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Metal oxide varistor with reinforced electrodes2024
Contacts for semiconductor devices2023
Split gate charge trapping memory cells having different select gate and memory 2022
Memory first process flow and device2022
Resistive change elements using passivating interface gaps and methods for makin2022
Memory device having programmable impedance elements with a common conductor for2021
Memory device having programmable impedance elements with a common conductor for2021
Reference circuits and methods for resistive memories2021
Contacts for semiconductor devices2021
Charge trapping split gate device and method of fabricating same2021
Memory first process flow and device2020
Split gate charge trapping memory cells having different select gate and memory 2020