| 9922833 |
Charge trapping split gate embedded flash memory and associated methods |
Mark T. Ramsbey, Chun Chen, Sameer Haddad, Kuo-Tung Chang, Unsoon Kim +2 more |
2018-03-20 |
$14,461,000 |
| 9466489 |
Process for forming edge wordline implants adjacent edge wordlines |
Tim Thurgate, Chun Chen |
2016-10-11 |
$5,640,000 |
| 9461151 |
Dual storage node memory |
Fred Cheung, Hiroyuki Kinoshita, Chungho Lee, Chi Chang |
2016-10-04 |
$6,131,000 |
| 8673716 |
Memory manufacturing process with bitline isolation |
Mark T. Ramsbey, Tazrien Kamal, Jean Y. Yang, Emmanuil Lingunis, Hidehiko Shiraiwa |
2014-03-18 |
$3,810,000 |
| 8564042 |
Dual storage node memory |
Fred Cheung, Hiroyuki Kinoshita, Chungho Lee, Chi Chang |
2013-10-22 |
$2,568,000 |
| 7995386 |
Applying negative gate voltage to wordlines adjacent to wordline associated with read or verify to reduce adjacent wordline disturb |
Yuji Mizuguchi, Mark Randolph, Darlene Hamilton, Yi He, Zhizheng Liu +9 more |
2011-08-09 |
$1,938,000 |
| 7977218 |
Thin oxide dummy tiling as charge protection |
Cinti X. Chen, Yi He, Wenmei Li, Zhizheng Liu, Ming Sang Kwan +1 more |
2011-07-12 |
$1,106,000 |
| 7759745 |
Semiconductor memory device |
Hideki Komori, Hisayuki Shimada, Hiroyuki Kinoshita |
2010-07-20 |
|
| 7632749 |
Semiconductor device having a pad metal layer and a lower metal layer that are electrically coupled, whereas apertures are formed in the lower metal layer below a center area of the pad metal layer |
Hiroyuki Ogawa, Yider Wu, Nian Yang, Kuo-Tung Chang |
2009-12-15 |
|
| 7482226 |
Semiconductor memory device |
Hideki Komori, Hisayuki Shimada, Hiroyuki Kinoshita |
2009-01-27 |
|
| 7439141 |
Shallow trench isolation approach for improved STI corner rounding |
Unsoon Kim, Hiroyuki Kinoshita, Kuo-Tung Chang, Harpreet Sachar, Mark S. Chang |
2008-10-21 |
$1,390,000 |
| 7432178 |
Bit line implant |
Angela T. Hui, Jean Y. Yang, Mark T. Ramsbey, Weidong Qian |
2008-10-07 |
|
| 7323726 |
Method and apparatus for coupling to a common line in an array |
Kuo-Tung Chang |
2008-01-29 |
$1,444,000 |
| 7307002 |
Non-critical complementary masking method for poly-1 definition in flash memory device fabrication |
Unsoon Kim, Hiroyuki Kinoshita, Krishnashree Achuthan, Christopher H. Raeder, Christopher Foster +2 more |
2007-12-11 |
$706,000 |
| 7303964 |
Self-aligned STI SONOS |
Hidehiko Shiraiwa, Mark Randolph |
2007-12-04 |
$5,444,000 |
| 7301193 |
Structure and method for low Vss resistance and reduced DIBL in a floating gate memory cell |
Shenqing Fang, Timothy Thurgate, Kuo-Tung Chang, Richard Fastow, Angela T. Hui +4 more |
2007-11-27 |
$6,734,000 |
| 7226839 |
Method and system for improving the topography of a memory array |
King Wai Kelwin Ko, Hiroyuki Kinoshita, Hiroyuki Ogawa |
2007-06-05 |
$3,927,000 |
| 7202540 |
Semiconductor memory device |
Hideki Komori, Hisayuki Shimada, Hiroyuki Kinoshita |
2007-04-10 |
|
| 7151027 |
Method and device for reducing interface area of a memory device |
Hiroyuki Ogawa, Yider Wu, Kuo-Tung Chang |
2006-12-19 |
$3,490,000 |
| 7078314 |
Memory device having improved periphery and core isolation |
Unsoon Kim, Hiroyuki Kinoshita |
2006-07-18 |
$7,111,000 |
| 7060564 |
Memory device and method of simultaneous fabrication of core and periphery of same |
Inkuk Kang, Hiroyuki Kinoshita, Weidong Qian, Kelwin Ko |
2006-06-13 |
$11,852,000 |
| 7012008 |
Dual spacer process for non-volatile memory devices |
Jeffrey A. Shields, Tuan Pham, Mark T. Ramsbey, Angela T. Hui, Maria C. Chan |
2006-03-14 |
$17,128,000 |
| 6995437 |
Semiconductor device with core and periphery regions |
Hiroyuki Kinoshita, Basab Banerjee, Christopher Foster, John R. Behnke, Cyrus E. Tabery |
2006-02-07 |
$12,481,000 |
| 6989319 |
Methods for forming nitrogen-rich regions in non-volatile semiconductor memory devices |
Mark T. Ramsbey, Sameer Haddad, Vei-Han Chan, Chi Chang |
2006-01-24 |
$11,964,000 |
| 6974995 |
Method and system for forming dual gate structures in a nonvolatile memory using a protective layer |
Angela T. Hui, Shenqing Fang, Hiroyuki Kinoshita, Kelwin Ko, Wenmei Li +2 more |
2005-12-13 |
$8,414,000 |
