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Semiconductor device and method of manufacturing the same |
Kei Yamamoto, Kazuhiro Tada, Toru Kimura, Masaki Goto, Hiroyuki Yoshihara |
2016-07-12 |
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Semiconductor memory device |
Hisayuki Shimada, Yu Sun, Hiroyuki Kinoshita |
2010-07-20 |
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Semiconductor memory device |
Hisayuki Shimada, Yu Sun, Hiroyuki Kinoshita |
2009-01-27 |
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Semiconductor device and control method thereof |
Shouichi Kawamura, Masanori Taya |
2007-06-05 |
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Semiconductor memory device |
Hisayuki Shimada, Yu Sun, Hiroyuki Kinoshita |
2007-04-10 |
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Dual bit memory device with isolated polysilicon floating gates |
Jusuke Ogura, Kazuhiro Kurihara, Masaru Yano, Tuan Pham, Angela T. Hui |
2004-03-30 |
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Semiconductor device manufacturing method including forming FOX with dual oxidation |
Hiroyuki Shimada, Masaaki Higashitani, Hideo Kurihara, Satoshi Takahashi |
2003-06-17 |
| 6573140 |
Process for making a dual bit memory device with isolated polysilicon floating gates |
Jusuke Ogura, Kiyoshi Izumi, Masaru Yano, Tuan Pham, Angela T. Hui |
2003-06-03 |
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Process for fabricating a non-volatile memory device |
David K. Foote, Fei Wang, Bharath Rangarajan |
2003-03-04 |
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High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device |
Arvind Halliyal, Robert B. Ogle, Kenneth Wo-Wai Au |
2001-07-24 |
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Method of fabricating an ONO dielectric by nitridation for MNOS memory cells |
Arvind Halliyal, David K. Foote, Kenneth Wo-Wai Au |
2001-06-19 |
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David K. Foote, Bharath Rangarajan, Steven K. Park |
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Process for fabricating a bit-line using buried diffusion isolation |
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2001-06-05 |
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Method to generate a MONOS type flash cell using polycrystalline silicon as an ONO top layer |
Steven K. Park, Arvind Halliyal |
2001-04-17 |
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Semiconductor device manufacturing method including various oxidation steps with different concentration of chlorine to form a field oxide |
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Integrated method by using high temperature oxide for top oxide and periphery gate oxide |
Kenneth Wo-Wai Au, Mark Ramsbey |
2000-09-12 |
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Semiconductor producing apparatus, and wafer vacuum chucking device, gas cleaning method and nitride film forming method in semiconductor producing apparatus |
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Method of fabricating an EPROM type device with reduced process residues |
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1999-09-07 |
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Wide bandwidth electromagnetic wave absorbing material |
Koji Nakamura, Mitsuyuki Oda, Kazunori Kanda |
1998-06-23 |
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Semiconductor producing apparatus comprising wafer vacuum chucking device |
Yoshimi Kinoshita, Tomoyuki Kanda, Katsuhisa Kitano, Kazuo Yoshida, Hiroshi Ohnishi +9 more |
1996-07-09 |