| 11069789 |
Varied silicon richness silicon nitride formation |
Yi Ma, Shenqing Fang |
2021-07-20 |
|
| 10644126 |
Varied silicon richness silicon nitride formation |
Yi Ma, Shenqing Fang |
2020-05-05 |
|
| 9012333 |
Varied silicon richness silicon nitride formation |
Yi Ma, Shenqing Fang |
2015-04-21 |
|
| 8803216 |
Memory cell system using silicon-rich nitride |
Meng Ding, Lei Xue, Mark Randolph, Chi Chang |
2014-08-12 |
|
| 8563441 |
Methods for fabricating memory cells having fin structures with smooth sidewalls and rounded top corners and edges |
Yi Ma |
2013-10-22 |
$2,568,000 |
| 7964905 |
Anti-reflective interpoly dielectric |
Marina V. Plat, Mark T. Ramsbey |
2011-06-21 |
$2,620,000 |
| 7863175 |
Zero interface polysilicon to polysilicon gate for flash memory |
Joong S. Jeon, Eric N. Paton, Austin Frenkel |
2011-01-04 |
|
| 7863128 |
Non-volatile memory device with improved erase speed |
Joong S. Jeon, Takashi Orimoto, Harpreet Sachar, Wei Zheng |
2011-01-04 |
|
| 7602067 |
Hetero-structure variable silicon rich nitride for multiple level memory flash memory device |
Yi Ma |
2009-10-13 |
|
| 7354826 |
Method for forming memory array bitlines comprising epitaxially grown silicon and related structure |
Takashi Orimoto, Rinji Sugino |
2008-04-08 |
|
| 7351638 |
Scanning laser thermal annealing |
Cyrus E. Tabery, Eric N. Paton, Bin Yu, Qi Xiang |
2008-04-01 |
$18,550,000 |
| 7211489 |
Localized halo implant region formed using tilt pre-amorphization implant and laser thermal anneal |
Qi Xiang, Eric N. Paton, Cyrus E. Tabery, Bin Yu |
2007-05-01 |
$26,379,000 |
| 7091097 |
End-of-range defect minimization in semiconductor device |
Eric N. Paton, Qi Xiang, Cyrus E. Tabery, Bin Yu |
2006-08-15 |
$18,169,000 |
| 7026211 |
Semiconductor component and method of manufacture |
Rinji Sugino, Joong S. Jeon |
2006-04-11 |
$9,016,000 |
| 7001814 |
Laser thermal annealing methods for flash memory devices |
Arvind Halliyal, Mark T. Ramsbey |
2006-02-21 |
$12,668,000 |
| 6992370 |
Memory cell structure having nitride layer with reduced charge loss and method for fabricating same |
George Jonathan Kluth, Robert Clark-Phelps, Joong S. Jeon, Huicai Zhong, Arvind Halliyal +3 more |
2006-01-31 |
$15,487,000 |
| 6902966 |
Low-temperature post-dopant activation process |
Bin Yu, Eric N. Paton, Cyrus E. Tabery, Qi Xiang |
2005-06-07 |
$8,078,000 |
| 6867097 |
Method of making a memory cell with polished insulator layer |
Mark T. Ramsbey, Tommy Hsiao, Angela T. Hui, Tuan Pham, Marina V. Plat +1 more |
2005-03-15 |
$4,259,000 |
| 6867080 |
Polysilicon tilting to prevent geometry effects during laser thermal annealing |
Eric N. Paton, Cyrus E. Tabery, Qi Xiang, Bin Yu |
2005-03-15 |
$4,259,000 |
| 6858496 |
Oxidizing pretreatment of ONO layer for flash memory |
Arvind Halliyal |
2005-02-22 |
$8,271,000 |
| 6849925 |
Preparation of composite high-K/standard-K dielectrics for semiconductor devices |
Arvind Halliyal, Joong S. Jeon, Minh Van Ngo |
2005-02-01 |
$6,992,000 |
| 6825115 |
Post silicide laser thermal annealing to avoid dopant deactivation |
Qi Xiang, Eric N. Paton, Cyrus E. Tabery, Bin Yu |
2004-11-30 |
$7,368,000 |
| 6812106 |
Reduced dopant deactivation of source/drain extensions using laser thermal annealing |
Qi Xiang, Eric N. Paton, Cyrus E. Tabery, Bin Yu |
2004-11-02 |
$2,431,000 |
| 6803272 |
Use of high-K dielectric material in modified ONO structure for semiconductor devices |
Arvind Halliyal, Mark T. Ramsbey, Kuo-Tung Chang, Nicholas H. Tripsas |
2004-10-12 |
$4,245,000 |
| 6798002 |
Dual-purpose anti-reflective coating and spacer for flash memory and other dual gate technologies and method of forming |
Tuan Pham, Mark T. Ramsbey |
2004-09-28 |
$1,915,000 |
