| 7863175 |
Zero interface polysilicon to polysilicon gate for flash memory |
Robert B. Ogle, Joong S. Jeon, Austin Frenkel |
2011-01-04 |
|
| 7713834 |
Method of forming isolation regions for integrated circuits |
Haihong Wang, Minh Van Ngo, Qi Xiang, Paul R. Besser, Ming-Ren Lin |
2010-05-11 |
$11,612,000 |
| 7648886 |
Shallow trench isolation process |
Minh Van Ngo, Qi Xiang, Paul R. Besser, Ming-Ren Lin |
2010-01-19 |
$30,644,000 |
| 7456062 |
Method of forming a semiconductor device |
William G. En, Thorsten Kammler, Paul R. Besser, Simon S. Chan |
2008-11-25 |
$3,883,000 |
| 7422961 |
Method of forming isolation regions for integrated circuits |
Haihong Wang, Minh Van Ngo, Qi Xiang, Paul R. Besser, Ming-Ren Lin |
2008-09-09 |
$8,320,000 |
| 7402485 |
Method of forming a semiconductor device |
William G. En, Thorsten Kammler, Scott Luning |
2008-07-22 |
$4,320,000 |
| 7402207 |
Method and apparatus for controlling the thickness of a selective epitaxial growth layer |
Paul R. Besser, William G. En |
2008-07-22 |
$4,320,000 |
| 7351638 |
Scanning laser thermal annealing |
Cyrus E. Tabery, Bin Yu, Qi Xiang, Robert B. Ogle |
2008-04-01 |
$18,550,000 |
| 7312125 |
Fully depleted strained semiconductor on insulator transistor and method of making the same |
Qi Xiang, Paul R. Besser, Minh Van Ngo, Haihong Wang |
2007-12-25 |
|
| 7298012 |
Shallow junction semiconductor |
Mario M. Pelella, William G. En, Witold P. Maszara |
2007-11-20 |
$5,989,000 |
| 7256141 |
Interface layer between dual polycrystalline silicon layers |
Mark T. Ramsbey, Weidong Qian, Mark S. Chang |
2007-08-14 |
|
| 7241700 |
Methods for post offset spacer clean for improved selective epitaxy silicon growth |
William G. En, Scott Luning |
2007-07-10 |
$17,592,000 |
| 7211489 |
Localized halo implant region formed using tilt pre-amorphization implant and laser thermal anneal |
Qi Xiang, Robert B. Ogle, Cyrus E. Tabery, Bin Yu |
2007-05-01 |
$26,379,000 |
| 7091097 |
End-of-range defect minimization in semiconductor device |
Qi Xiang, Cyrus E. Tabery, Bin Yu, Robert B. Ogle |
2006-08-15 |
$18,169,000 |
| 7071065 |
Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabrication |
Qi Xiang, Haihong Wang |
2006-07-04 |
|
| 7033916 |
Shallow junction semiconductor and method for the fabrication thereof |
Mario M. Pelella, William G. En, Witold P. Maszara |
2006-04-25 |
$9,950,000 |
| 6966235 |
Remote monitoring of critical parameters for calibration of manufacturing equipment and facilities |
— |
2005-11-22 |
|
| 6967160 |
Method of manufacturing semiconductor device having nickel silicide with reduced interface roughness |
Paul R. Besser, Simon S. Chan, Fred N. Hause |
2005-11-22 |
$6,256,000 |
| 6962857 |
Shallow trench isolation process using oxide deposition and anneal |
Minh Van Ngo, Ming-Ren Lin, Haihong Wang, Qi Xiang, Jung-Suk Goo |
2005-11-08 |
$6,799,000 |
| 6924182 |
Strained silicon MOSFET having reduced leakage and method of its formation |
Qi Xiang, Ming-Ren Lin, Minh Van Ngo, Haihong Wang |
2005-08-02 |
$7,108,000 |
| 6921709 |
Front side seal to prevent germanium outgassing |
Haihong Wang, Qi Xiang |
2005-07-26 |
$17,204,000 |
| 6905923 |
Offset spacer process for forming N-type transistors |
Haihong Wang, Qi Xiang |
2005-06-14 |
$5,811,000 |
| 6902966 |
Low-temperature post-dopant activation process |
Bin Yu, Robert B. Ogle, Cyrus E. Tabery, Qi Xiang |
2005-06-07 |
$8,078,000 |
| 6878592 |
Selective epitaxy to improve silicidation |
Paul R. Besser, Minh Van Ngo, Qi Xiang |
2005-04-12 |
$6,806,000 |
| 6878559 |
Measurement of lateral diffusion of diffused layers |
Peter G. Borden, G. Jonathan Kluth |
2005-04-12 |
|
