| 11075339 |
Correlated electron material (CEM) devices with contact region sidewall insulation |
Ming He, Jingyan Zhang, Manuj Rathor |
2021-07-27 |
|
| 10854811 |
Formation of correlated electron material (CEM) devices with restored sidewall regions |
Ming He, Jolanta Bozena Celinska |
2020-12-01 |
|
| 10833271 |
Method for fabrication of a CEM device |
Ming He |
2020-11-10 |
|
| 10672982 |
Fabrication of correlated electron material (CEM) devices |
Ming He, Jingyan Zhang, Manuj Rathor |
2020-06-02 |
|
| 10566527 |
Method for fabrication of a CEM device |
Ming He |
2020-02-18 |
|
| 9607904 |
Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices |
Albert S. Lee, Kisik Choi, Edward Haywood, Hoon Kim, Salil Mujumdar |
2017-03-28 |
$679,000 |
| 9553031 |
Method for integrating germanides in high performance integrated circuits |
Thorsten Lill |
2017-01-24 |
$41,726,000 |
| 9515156 |
Air gap spacer integration for improved fin device performance |
Bart J. van Schravendijk, Yoshie Kimura, Gerardo Delgadino, Harald Orkorn-Schmidt, Dengliang Yang |
2016-12-06 |
$22,040,000 |
| 9484251 |
Contact integration for reduced interface and series contact resistance |
William Crew, Sanjay Gopinath |
2016-11-01 |
$12,156,000 |
| 9362283 |
Gate structures for transistor devices for CMOS applications and products |
Zhendong Hong, Susie Tzeng, Amol Joshi, Ashish Bodke, Divya Pisharoty +6 more |
2016-06-07 |
$2,066,000 |
| 9269615 |
Multi-layer barrier layer for interconnect structure |
Vivian W. Ryan, Xunyuan Zhang |
2016-02-23 |
$655,000 |
| 9202758 |
Method for manufacturing a contact for a semiconductor component and related structure |
Minh Van Ngo, Connie P. Wang, Jinsong Yin, Hieu Pham |
2015-12-01 |
$753,000 |
| 9196475 |
Methods for fabricating integrated circuits including fluorine incorporation |
Bongki Lee, Kevin Kashefi, Olov Karlsson, Ashish Bodke, Ratsamee Limdulpaiboon +2 more |
2015-11-24 |
$992,000 |
| 9142633 |
Integrated circuits and methods for fabricating integrated circuits with silicide contacts on non-planar structures |
Mark V. Raymond, Valli Arunachalam, Hoon Kim |
2015-09-22 |
$916,000 |
| 9105497 |
Methods of forming gate structures for transistor devices for CMOS applications |
Zhendong Hong, Susie Tzeng, Amol Joshi, Ashish Bodke, Divya Pisharoty +6 more |
2015-08-11 |
$1,758,000 |
| 9076792 |
Multi-layer barrier layer stacks for interconnect structures |
Vivian W. Ryan, Xunyuan Zhang |
2015-07-07 |
$909,000 |
| 8778789 |
Methods for fabricating integrated circuits having low resistance metal gate structures |
Sean Xuan Lin, Valli Arunachalam |
2014-07-15 |
$3,357,000 |
| 8772158 |
Multi-layer barrier layer stacks for interconnect structures |
Vivian W. Ryan, Xunyuan Zhang |
2014-07-08 |
$2,496,000 |
| 8728931 |
Multi-layer barrier layer for interconnect structure |
Vivian W. Ryan, Xunyuan Zhang |
2014-05-20 |
$2,934,000 |
| 8723321 |
Copper interconnects with improved electromigration lifetime |
Christy Mei-Chu Woo, Jun Zhai, Kok Yong Yiang, Richard C. Blish, II, Christine Hau-Riege |
2014-05-13 |
$1,755,000 |
| 8709941 |
Method for forming contact in an integrated circuit |
— |
2014-04-29 |
$5,122,000 |
| 8703620 |
Methods for PFET fabrication using APM solutions |
Joanna Wasyluk, Stephan Kronholz, Berthold Reimer, Sven Metzger, Gregory Nowling +1 more |
2014-04-22 |
$3,317,000 |
| 8691689 |
Methods for fabricating integrated circuits having low resistance device contacts |
Sean Xuan Lin, Valli Arunachalam |
2014-04-08 |
$3,686,000 |
| 8623758 |
Subtractive metal multi-layer barrier layer for interconnect structure |
Vivian W. Ryan, Xunyuan Zhang |
2014-01-07 |
$3,415,000 |
| 8330235 |
Method to reduce mol damage on NiSi |
Karthik Ramani |
2012-12-11 |
$1,376,000 |
